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Details, datasheet, quote on part number:PUA3112
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Datasheet text preview:
Power Transistor Arrays
PUA3112 (PU3112)
Silicon NPN epitaxial planar type
For power amplification/switching Complementary to PUA3212 (PU3212)
9.5±0.2 1.65±0.2 8.0±0.2
Unit: mm
20.2±0.3 4.0±0.2
Features
· High forward current transfer ratio hFE which has satisfactory linearity · Low collector-emitter saturation voltage VCE(sat) · NPN 3 elements
0.8±0.25 Solder Dip 5.3±0.5 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 7 × 2.57 = 17.78±0.25 C 1.5±0.5
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO V CEO V EBO IC ICP PC Rating 130 80 7 3 6 15 2.4 150 -55 to +150 °C °C Unit V V V A A W
0.5±0.15
1: Emitter 2: Base 3: Collector 12345678 4: Base 5: Collector 6: Base 7: Collector 8: Emitter SIP8-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO I EBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = 10 mA, IB = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 0.5 A IC = 2 A, IB = 0.1 A IC = 2 A, IB = 0.1 A VCE = 10 V, IC = 0.5 A, f = 10 MHz IC = 0.5 A IB1 = 50 mA, IB2 = -50 mA VCC = 50 V 30 0.5 2.5 0.15 45 60 260 0.5 1.5 V V MHz µs µs µs Min 80 10 50 Typ Max Unit V µA µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Internal Connection
3 2 1 4 5 6 8
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004 SJK00003AED
7
1
PUA3112
PC Ta
20 (1) (2) (3) (1) (4) 12 T C = Ta With a 50 × 50 × 2 mm Al heat sink With a 50 × 25 × 2 mm Al heat sink Without heat sink 5
IC VCE
TC = 25°C IB = 100 mA 4
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 20
Collector power dissipation PC (W)
16
Collector current IC (A)
10
50 mA 3 30 mA 25 mA 2 20 mA 10 mA 5 mA 2 mA 1 mA 10 12
1
TC = 100°C 25°C -25°C
8 (2) 4 (3) (4)
0.1
1
0
0
40
80
120
160
0
0
2
4
6
8
0.01 0.01
0.1
1
10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
100
hFE IC
104 VC E = 2 V
f T IC
104 VCE = 10 V TC = 25°C
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 20
Forward current transfer ratio hFE
10
103 TC = 100°C 102 -25°C 25°C
Transition frequency fT (MHz)
1 10
103
1
25°C
TC = -25°C 100°C
102
0.1
10
10
0.01 0.01
0.1
1
10
1 0.01
0.1
1 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton , tstg , tf IC
Turn-on time ton , Storage time tstg , Fall time tf (µs)
100 Pulsed tW = 1 ms Duty cycle = 1% IC / IB = 10 (IB1 = -IB2) VCC = 50 V TC = 25°C 100
Safe operation area
Non repetitve pulse TC = 25°C (Per circuit)
Collector current IC (A)
10
10
ICP t = 0.5 ms
1
ts t g to n tf
1
t = 10 ms
t = 1 ms
0.1
0.1
0.01
0
0.4
0.8
1.2
1.6
2
0.01
1
10
100
1 000
Collector current IC (A)
Collector-emitter voltage VCE (V)
2
SJK00003AED
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