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Details, datasheet, quote on part number:PUA3117
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| Part: | PUA3117 |
| Category: | Discrete => Transistors => Bipolar => Bipolar Array => Power Transistor Arrays |
| Description: | V<SUB>CEO</SUB>(V) = 60 ;; I<SUB>C</SUB>(A) = 3 ;; P<SUB>D</SUB>(W) = ;; Hfemin = 500 ;; HFE(max) = 2500 ;; T<SUB>on</SUB>(µs) = ;; T<SUB>f</SUB>(µs) = ;; Package = SIP8-A1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PUA3117 datasheet File size : 84 kB |
| Request For quote: | Find where to buy PUA3117
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Datasheet text preview:
Power Transistor Arrays
PUA3117 (PU3117)
Silicon NPN triple diffusion planar type
For power amplification and switching
20.2±0.3
Unit: mm
4.0±0.2
Features
· High forward current transfer ratio hFE · Satisfactory linearity of forward current transfer ratio hFE · NPN 3 elements
9.5±0.2 1.65±0.2 8.0±0.2
0.8±0.25 Solder Dip 5.3±0.5 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 7 × 2.57 = 17.78±0.25 C 1.5±0.5
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol V CBO V CEO V EBO IC I CP IB PC Rating 80 60 6 3 6 1 15 2.4 150 -55 to +150 °C °C Unit V V V A A A W
0.5±0.15
1: Emitter 2: Base 3: Collector 12345678 4: Base 5: Collector 6: Base 7: Collector 8: Emitter SIP8-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol V CEO IC B O ICEO IEBO h FE V CE(sat) fT Conditions IC = 25 mA, IB = 0 VCB = 80 V, IE = 0 VCE = 40 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 0.5 A IC = 2 A, IB = 0.05 A VCE = 12 V, IC = 0.2 A, f = 10 MHz 50 500 Min 60 100 100 100 2 500 1.0 Typ Max Unit V µA µA µA V MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Internal Connection
3 2 1 4 5 6 8 7
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003 SJK00007AED
1
PUA3117
PC Ta
20
IC VCE
1.0 IB = 1.2 mA TC = 25°C 1 mA 0.8
4 5
IC VBE
VCE = 4 V 25°C TC = 100°C -25°C
Collector power dissipation PC (W)
16
(1)
Collector current IC (A)
0.7 mA 0.6 mA 0.6 0.5 mA 0.4 mA 0.4 0.3 mA 0.2mA 0.2 0.1 mA
12
Collector current IC (A)
(1) TC = Ta (2) With a 50 × 50 × 2 mm Al heat sink (3) With a 50 × 25 × 2 mm Al heat sink (4) Without heat sink
3
8 (2) 4 (3) (4)
2
1
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 40 104
hFE IC
V CE = 4 V TC = 100°C 103 -25°C 25°C
104
fT I C
VCE = 12 V TC = 25°C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
10 TC = 100°C 1 25°C
103
102
102
0.1
-25°C
10
10
0.01 0.01
0.1
1
10
1 0.01
0.1
1
10
1 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
104 IE = 0 f = 1 MHz TC = 25°C
100
Safe operation area
Non repetitve pulse TC = 25°C (Per circuit)
Collector current IC (A)
103
10
ICP t = 1 ms t = 10 ms
102
1
10
0.1
1 0.1
1
10
100
0.01
1
10
100
1 000
Collector-base voltage VCB (V)
Collector-emitter voltage VCE (V)
2
SJK00007AED
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