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Part: PUA3121
Category:
Description: Composite Device - Power Transistor Arrays
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download PUA3121 datasheet File size : 464 kB
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Power Transistor Arrays
PUA3121 (PU3121)
Silicon NPN triple diffusion planar type darlington
For power amplification Features
· Built-in zener diode (30 V) between collector and base · Small variation in withstand pressure · Large energy handling capability · High-speed switching · NPN 3 elements
20.2±0.3
Unit: mm
4.0±0.2
9.5±0.2 1.65±0.2
8.0±0.2
0.8±0.25 Solder Dip 5.3±0.5 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 7 × 2.57 = 17.78±0.25 C 1.5±0.5
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO V CEO V EBO IC ICP PC Rating 30 ± 5 30 ± 5 5 2 4 15 2.4 150 -55 to +150 °C °C Unit V V V A A W
0.5±0.15
1: Emitter 2: Base 3: Collector 4: Base 12345678 5: Collector 6: Base 7: Collector 8: Emitter SIP8-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO I EBO hFE1 hFE2 * 1 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Energy handling capability *2 VCE(sat) VBE(sat) fT ton tstg tf Es/b Conditions IC = 5 mA, IB = 0 VCB = 25 V, IE = 0 VEB = 5 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 2 A IC = 2 A, IB = 8 mA IC = 2 A, IB = 8 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 2 A IB1 = 8 mA, IB2 = -8 mA VCC = 20 V IC = 1.45 A, L = 100 mH, RBE = 100 100 20 0.4 3.0 1.0 1 000 1 000 10 000 2.5 2.5 V V MHz µs µs µs mJ Min 25 Typ Max 35 100 2 Unit V µA mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1 : Rank classification *2 : Es/b test circuit X Mercury relay Rank Free P Q L hFE 1 000 to 10 000 2 000 to 10 000 1 000 to 5 000 Y RBE Z
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004 SJK00011AED
1
PUA3121
Internal Connection
3 4 5 6 7
Collector power dissipation PC (W)
20
PC Ta
(1) TC = Ta (2) With a 50 × 50 × 2 mm Al heat sink (3) With a 50 × 25 × 2 mm Al heat sink (4) Without heat sink
16
2 1
(1)
8
12
8 (2) 4 (3) (4)
0
0
40
80
120
160
Ambient temperature Ta (°C)
IC VCE
TC = 25°C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100
VBE(sat) IC
100
6
5
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 250
IC / IB = 250
Collector current IC (A)
4
3
2
IB = 2.0 mA 1.8 mA 1.6 mA 1.4 mA 1.2 mA 1.0 mA 0.8 mA 0.6 mA 0.4 mA 0.2 mA
10 TC = 100°C 25°C 1 -25°C
10 TC = -25°C 1 100°C 25°C 0.1
0.1
1
0
0
1
2
3
4
5
6
0.01 0.01
0.1
1
10
0.01 0.01
0.1
1
10
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (A)
hFE IC
105 IC / IB = 250
Guidance load characteristic
100 RBE = 100 TC = 25°C
100
Safe operation area
Non repetitve pulse TC = 25°C (Per circuit)
Forward current transfer ratio hFE
Collector current IC (A)
Collector current IC (A)
104
TC = 100°C
10 100 mJ 1
10 ICP t = 10 ms 1 t = 1 ms
25°C 103 -25°C
102
0.1
0.1
10 0.01
0.01
0.1 1 10
1
10
100
1 000
0.01
1
10
100
1 000
Collector current IC (A)
Coil L (mH)
Collector-emitter voltage VCE (V)
2
SJK00011AED
Others parts begin by pu
PU-1
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