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Part: PUB4110
Category:
Description: Composite Device - Power Transistor Arrays
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download PUB4110 datasheet File size : 464 kB
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Datasheet text preview:
Power Transistor Arrays
PUB4110 (PU4110), PUB4410 (PU4410)
Silicon NPN triple diffusion planar type
For power amplification/switching Complementary to PUB4210 (PU4210), PUB4510 (PU4510) Features
· High forward current transfer ratio hFE which has satisfactory linearity · Low collector-emitter saturation voltage VCE(sat) · PUB4110 (PU4110): NPN 4 elements PUB4410 (PU4410): NPN 2 elements × 2
9.5±0.2 8.0±0.2
Unit: mm
25.3±0.2
4.0±0.2
0.8±0.25 0.5±0.15 1.0±0.25 2.54±0.2 9 × 2.54 = 22.86±0.25
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO V CEO V EBO IC ICP IB PC Rating 60 60 6 3 5 1 15 3.5 150 -55 to +150 °C °C Unit V V V A A A W
1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5
0.5±0.15
C 1.5±0.5
1: Emitter 2: Base 3: Collector 4: Base 5: Collector 1 2 3 4 5 6 7 8 9 10 6: Base 7: Collector 8: Base 9: Collector 10: Emitter SIP10-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter current (E-B short) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO VBE ICES I CEO I EBO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf Conditions IC = 30 mA, IB = 0 VCE = 4 V, IC = 3 A VCE = 60 V, VBE = 0 VCE = 30 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 10 V, IC = 0.5 A, f = 10 MHz IC = 1 A IB1 = 0.1 A, IB2 = - 0.1 A VCC = 50 V 30 0.5 2.5 0.4 70 10 1.2 V MHz µs µs µs Min 60 1.8 200 300 1 250 Typ Max Unit V V µA µA mA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Internal Connection
· PUB4110 3
2 1 4 5 6 7 8 9
· PUB4410
2
3 4
5 6
7 8
9
1 10 10 Note) The part numbers in the parenthesis show conventional part number.
SJK00058AED
Publication date: March 2004
1
PUB4110, PUB4410
PC Ta
20 (1) (2) (3) (1)
IC VCE
5 TC = 25°C 4 8
IC VBE
VCE = 4 V 25°C
Collector power dissipation PC (W)
16
T C = Ta With a 50 × 50 × 2 mm Al heat sink Without heat sink
Collector current IC (A)
Collector current IC (A)
12
3
IB = 100 mA 90 mA 80 mA 70 mA 60 mA 50 mA 40 mA 30 mA 20 mA
6 TC = 100°C -25°C
4
8
(2)
2
4
(3)
2
1
10 mA
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 8 104
hFE IC
VC E = 4 V
f T IC
104 VC E = 5 V TC = 25°C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
10 TC = 100°C 1 25°C
103 TC = 100°C 102 25°C -25°C
103
102
0.1
-25°C
10
10
0.01 0.01
0.1
1
10
1 0.01
0.1
1
10
1 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
104 IE = 0 f = 1 MHz TC = 25°C 100
Safe operation area
Non repetitve pulse TC = 25°C (Per circuit)
Collector current IC (A)
103
10
ICP t = 1 ms
102
1
t = 10 ms
10
0.1
1 0.1
1
10
100
0.01
1
10
100
1 000
Collector-base voltage VCB (V)
Collector-emitter voltage VCE (V)
2
SJK00058AED
Others parts begin by pu
PU-1
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