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Details, datasheet, quote on part number:PUB4213
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Datasheet text preview:
Power Transistor Arrays
PUB4213 (PU4213), PUB4513 (PU4513)
Silicon PNP epitaxial planar type
For power amplification/switching Complementary to PUB4113 (PU4113), PUB4413 (PU4413) Features
· Low collector-emitter saturation voltage VCE(sat) · Satisfactory linearity of forward current transfer ratio hFE · Large collector current IC · PUB4213 (PU4213): PNP 4 elements PUB4513 (PU4513): PNP 2 elements × 2 (total 4 elements)
9.5±0.2 8.0±0.2
Unit: mm
25.3±0.2
4.0±0.2
0.8±0.25 0.5±0.15 1.0±0.25 2.54±0.2 9 × 2.54 = 22.86±0.25
1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5
0.5±0.15
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO V CEO V EBO IC ICP PC Rating -1 3 0 -8 0 -7 -4 -8 15 3.5 150 -55 to +150 °C °C Unit V V V A A W
C 1.5±0.5
1: Emitter 2: Base 3: Collector 4: Base 5: Collector 1 2 3 4 5 6 7 8 9 10 6: Base 7: Collector 8: Base 9: Collector 10: Emitter SIP10-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO I EBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = -10 mA, IB = 0 VCB = -100 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -1 A IC = -3 A, IB = - 0.15 A IC = -3 A, IB = - 0.15 A VCE = -10 V, IC = - 0.5 A, f = 10 MHz IC = -1 A IB1 = - 0.1 A, IB2 = 0.1 A VCC = -50 V 30 0.15 0.8 0.15 45 60 260 - 0.5 -1 . 5 V V MHz µs µs µs Min -8 0 -10 -50 Typ Max Unit V µA µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Internal Connection
· PUB4213 3
2 1 4 5 6 7 8 10 9
· PUB4513
2 1
3 4
5 6
7 8
9
10
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004 SJK00070AED
1
PUB4213, PUB4513
PC Ta
20 (1) (2) (3) (1)
IC VCE
TC = 25°C IB = -100 mA -90 mA -80 mA -70 mA -60 mA -50 mA -40 mA -30 mA -20 mA -8 mA -5 mA -2 -4 -6 -8 -10
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 20
Collector power dissipation PC (W)
16
T C = Ta With a 50 × 50 × 2 mm Al heat sink Without heat sink
-6
-5
Collector current IC (A)
-10
-4
12
-3
-1 25°C TC = 100°C -25°C
8
(2)
-2
4
(3)
- 0.1
-1
0
0
40
80
120
160
0
0
- 0.01 - 0.01
- 0.1
-1
-10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
-100
hFE IC
104 VCE = -2 V
f T IC
104 VCE = -10 V TC = 25°C
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 20
Forward current transfer ratio hFE
-10
Transition frequency fT (MHz)
103 TC = 100°C 102 -25°C 25°C
103
-1
TC = -25°C 25°C 100°C
102
- 0.1
10
10
- 0.01 - 0.01
- 0.1
-1
-10
1 - 0.01
- 0.1
-1
-10
1 - 0.01
- 0.1
-1
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton , tstg , tf IC
Turn-on time ton , Storage time tstg , Fall time tf (µs)
100 Pulsed tW = 1 ms Duty cycle = 1% IC / IB = 10 (-IB1 = -IB2) VCC = -50 V TC = 25°C -100
Safe operation area
Non repetitve pulse TC = 25°C (per circuit) ICP t = 1 ms -1 t = 10 ms
1
tstg ton
0.1
tf
0.01
Collector current IC (A)
10
-10
- 0.1
0
- 0.8
-1.6
-2.4
-3.2
- 0.01 -1
-10
-100
-1 000
Collector current IC (A)
Collector-emitter voltage VCE (V)
2
SJK00070AED
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