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Details, datasheet, quote on part number:PUB4215
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Datasheet text preview:
Power Transistor Arrays
PUB4215 (PU4215)
Silicon PNP epitaxial planar type
For low-voltage switching Features
· Low collector-emitter saturation voltage VCE(sat) · High-speed switching · Large collector current IC · PNP 4 elements
9.5±0.2 8.0±0.2
Unit: mm
25.3±0.2
4.0±0.2
0.8±0.25 0.5±0.15 1.0±0.25 2.54±0.2 9 × 2.54 = 22.86±0.25
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO V CEO V EBO IC ICP PC Rating -4 0 -2 0 -5 -1 0 -1 5 15 3.5 150 -55 to +150 °C °C Unit V V V A A W
1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5
0.5±0.15
C 1.5±0.5
1: Emitter 2: Base 3: Collector 4: Base 5: Collector 1 2 3 4 5 6 7 8 9 10 6: Base 7: Collector 8: Base 9: Collector 10: Emitter SIP10-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO I EBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT Cob ton tstg tf Conditions IC = -10 mA, IB = 0 VCB = -40 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -2 A IC = -7 A, IB = - 0.23 A IC = -7 A, IB = - 0.23 A VCE = -10 V, IC = - 0.5 A, f = 10 MHz VCB = -10 V, IE = 0, f = 1 MHz IC = -2 A IB1 = -66 mA, IB2 = 66 mA VCC = -20 V 150 200 0.1 0.5 0.1 45 60 260 - 0.6 -1 . 5 V V MHz pF µs µs µs Min -2 0 -50 -50 Typ Max Unit V µA µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Internal Connection
3 2 1 4 5 6 7 8 10 9
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004 SJK00075AED
1
PUB4215
PC Ta
20
IC VCE
TC = 25°C IB = -160 mA -100 mA -8 -80 mA -60 mA -40 mA -4 -30 mA -20 mA -2 -10 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-10 IC / IB = 30
Collector power dissipation PC (W)
16
(1) TC = Ta (2) With a 50 × 50 × 2 mm Al heat sink (3) Without heat sink
-12
-10
Collector current IC (mA)
(1)
-1
12
-6
8
TC = 100°C -0.1 25°C
(2)
-25°C
4
(3)
0
0
40
80
120
160
0
0
-2
-4
-6
-8
-10
-12
- 0.01 - 0.1
-1
-10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
-10
hFE IC
104 VCE = -2 V
f T IC
104 VCE = -10 V TC = 25°C
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 30
Forward current transfer ratio hFE
Transition frequency fT (MHz)
103 TC = 100°C 102 -25°C 25°C
103
-1
TC = -25°C 100°C 25°C
102
- 0.1
10
10
- 0.01 - 0.1
-1
-10
1 - 0.1
-1
-10
-100
1 - 0.01
- 0.1
-1
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton , tstg , tf IC
Turn-on time ton , Storage time tstg , Fall time tf (µs)
10 Pulsed tW = 1 ms Duty cycle = 1% IC / IB = 30 (-IB1 = IB2) VCC = - 20 V, TC = 25°C -100
Safe operation area
Non repetitve pulse TC = 25°C (per circuit) ICP
1 tstg ton 0.1 tf
Collector current IC (A)
-10
t = 1 ms t = 10 ms
-1
- 0.1
0.01
0
-2
-4
-6
-8
- 0.01 -1
-10
-100
-1 000
Collector current IC (A)
Collector-emitter voltage VCE (V)
2
SJK00075AED
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