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Details, datasheet, quote on part number:PUB4423
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Datasheet text preview:
Power Transistor Arrays
PUB4123 (PU4123), PUB4423 (PU4423)
Silicon NPN triple diffusion planar type darlington
For power amplification Features
· Built-in zener diode (60 V) between collector and base · Small variation in withstand pressure · Large energy handling capability · High-speed switching · PUB4121 (PU4121): NPN 4 elements PUB4421 (PU4421): NPN 2 elements × 2
25.3±0.2
Unit: mm
4.0±0.2
9.5±0.2
8.0±0.2
0.8±0.25 0.5±0.15 1.0±0.25 2.54±0.2 9 × 2.54 = 22.86±0.25
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO V CEO V EBO IC ICP PC Rating 60 ±1 0 60 ±1 0 5 2 4 15 3.5 150 -55 to +150 °C °C Unit V V V A A W
1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5
0.5±0.15
C 1.5±0.5
1: Emitter 2: Base 3: Collector 4: Base 5: Collector 1 2 3 4 5 6 7 8 9 10 6: Base 7: Collector 8: Base 9: Collector 10: Emitter SIP10-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO I EBO hFE1 hFE2 * 1 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Energy handling capability *2 VCE(sat) VBE(sat) fT ton tstg tf Es/b Conditions IC = 5 mA, IB = 0 VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 2 A IC = 2 A, IB = 8 mA IC = 2 A, IB = 8 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 2 A IB1 = 8 mA, IB2 = -8 mA VCC = 50 V IC = 0.71 A, L = 100 mH, RBE = 100 25 20 0.4 3.0 1.0 1 000 1 000 10 000 2.5 2.5 V V MHz µs µs µs mJ Min 50 Typ Max 70 100 2 Unit V µA mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1 : Rank classification *2 : Es/b test circuit X Mercury relay Rank Free P Q L hFE 1 000 to 10 000 2 000 to 10 000 1 000 to 5 000 Y RBE Z
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004 SJK00066AED
1
PUB4123, PUB4423
Internal Connection
· PUB4123
3 4 5 6 7 8 9
Collector power dissipation PC (W)
16 (1) 20
PC Ta
(1) TC = Ta (2) With a 50 × 50 × 2 mm Al heat sink (3) Without heat sink
2 1
12
10
· PUB4423
3 4 5 6 7 8 9
8
(2)
4
(3)
2 1
0
0
40
80
120
160
10
Ambient temperature Ta (°C)
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
5 TC = 25°C
100
VCE(sat) IC
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 250
VBE(sat) IC
100 IC / IB = 250
4
Collector current IC (A)
3
IB = 2.0 mA 1.8 mA 1.6 mA 1.4 mA 1.2 mA 1.0 mA 0.8 mA 0.6 mA 0.4 mA
10
10
TC = -25°C 1 100°C 25°C 0.1
1
TC = -25°C 100°C 25°C
2
0.1
1 0.2 mA
0
0
1
2
3
4
5
6
0.01 0.01
0.1
1
10
0.01 0.01
0.1
1
10
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (A)
hFE IC
106 VC E = 4 V
100
Guidance load characteristic
RBE = 100 TC = 25°C 100
Safe operation area
Non repetitve pulse TC = 25°C (Per circuit)
Forward current transfer ratio hFE
TC = 100°C
Collector current IC (A)
Collector current IC (A)
105
10 25 mJ 1
10 ICP t = 1 ms 1 t = 10 ms
104
25°C
-25°C
103
0.1
0.1
102 0.01
0.1
1
10
0.01
1
10
100
1 000
0.01
1
10
100
1 000
Collector current IC (A)
Coil L (mH)
Collector-emitter voltage VCE (V)
2
SJK00066AED
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