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Details, datasheet, quote on part number:PUB4519
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Datasheet text preview:
Power Transistor Arrays
PUB4219 (PU4219), PUB4519 (PU4519)
Silicon PNP epitaxial planar type darlington
For power amplification Complementary to PUB4119 (PU4119), PUB4419 (PU4419) Features
· High forward current transfer ratio hFE · High-speed switching · PUB4219 (PU4219): PNP 4 elements PUB4519 (PU4519): PNP 2 elements × 2
9.5±0.2 8.0±0.2
Unit: mm
25.3±0.2
4.0±0.2
0.8±0.25 0.5±0.15 1.0±0.25 2.54±0.2 9 × 2.54 = 22.86±0.25
Absolute Maximum Ratings TC = 25°C
Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) V CEO Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature V EBO IC ICP PC Tj Tstg Rating -6 0 -6 0 -5 -2 -4 15 3.5 150 -55 to +150 Unit V V V A A W °C °C
1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5
0.5±0.15
C 1.5±0.5
1: Emitter 2: Base 3: Collector 4: Base 5: Collector 1 2 3 4 5 6 7 8 9 10 6: Base 7: Collector 8: Base 9: Collector 10: Emitter SIP10-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol VCEO VBE ICBO I CEO I EBO hFE1 h FE2 * VCE(sat) fT ton tstg tf Conditions IC = -30 mA, IB = 0 VCE = -4 V, IC = -2 A VCB = -60 V, IE = 0 VCE = -30 V, IB = 0 VEB = -5 V, IC = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -2 A IC = -2 A, IB = -8 mA VCE = -10 V, IC = - 0.5 A, f = 1 MHz IC = -2 A IB1 = -8 mA, IB2 = 8 mA VCC = -50 V Min -6 0 Typ Max -2 . 8 -1 -2 -2 1 000 1 000 20 0.4 1.5 0.5 10 000 -2 . 5 Unit V V mA mA mA V MHz µs µs µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank h FE Free P Q 1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
Internal Connection
· PUB4219
3 2 1 4 5 6 7 8 9 2 10 1
· PUB4519
3 4 5 6 7 8 9
10
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004 SJK00071AED
1
PUB4219, PUB4519
PC Ta
20 (1) (2) (3) (1) T C = Ta With a 50 × 50 × 2 mm Al heat sink Without heat sink
IC VCE
-5 TC = 25°C IB = -2.0 mA -1.8 mA -1.6 mA -1.4 mA -1.2 mA -1.0 mA - 0.8 mA - 0.6 mA -2 - 0.4 mA -10
IC VBE
VCE = -4 V
Collector power dissipation PC (W)
16
-4
-8
Collector current IC (A)
Collector current IC (A)
12
-3
-6 25°C TC = 100°C -4 -25°C
8
(2)
4
(3)
-1
- 0.2 mA - 0.1 mA
-2
0
0
40
80
120
160
0
0
-1
-2
-3
-4
-5
0
0
- 0.8
-1.6
-2.4
-3.2
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 250 105
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
VCE = -4 V
104
Cob VCB
IE = 0 V f = 1 MHz TC = 25°C
Forward current transfer ratio hFE
-10
104
TC = 100°C
103
-1
TC = 100°C -25°C 25°C
25°C 103
-25°C
102
- 0.1
102
10
- 0.01 - 0.01
- 0.1
-1
-10
10 - 0.01
- 0.1
-1
-10
1 0.1
1
10
100
Collector current IC (A)
Collector current IC (A)
Collector-base voltage VCB (V)
Safe operation area
-100 Non repetitve pulse TC = 25°C (per circuit)
Collector current IC (A)
-10 ICP t = 1 ms -1 t = 10 ms
- 0.1
- 0.01 -1
-10
-100
-1 000
Collector-emitter voltage VCE (V)
2
SJK00071AED
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