|
Details, datasheet, quote on part number:PUB4702
| |
| Part: | PUB4702 |
| Category: | Discrete => Transistors => Bipolar => Bipolar Array => Power Transistor Arrays |
| Description: | V<SUB>CEO</SUB>(V) = 35 ;; I<SUB>C</SUB>(A) = 1 ;; P<SUB>D</SUB>(W) = 0.38 ;; Hfemin = 0.68 ;; HFE(max) = ;; T<SUB>on</SUB>(µs) = 0.12 ;; T<SUB>f</SUB>(µs) = 0.39 ;; Package = SIP10-A1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PUB4702 datasheet File size : 45 kB |
| Request For quote: | Find where to buy PUB4702
|
| |
Datasheet text preview:
Power Transistor Arrays (F-MOS FETs)
PUB4702
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q Incorporating built-in zener diodes
1.65±0.2 9.5±0.2
unit: mm
25.3±0.2
4.0±0.2
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
4.4±0.5
8.0
s Applications
0.5±0.15 1.0±0.25 2.54±0.2 9!2.54=22.86±0.25
0.8±0.25 0.5±0.15
C1.5±0.5
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tc h Tstg Ratings 35 ± 10 ±15 ±1 ±2 2.5 15 3.5 150 -55 to +150 Unit V V A A mJ W °C °C
1
2
3
4
5
6
7
8
9 10
G: Gate D: Drain S: Source 10-Lead Plastic SIL Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25°C Ta = 25°C
L = 5mH, IL = 1A, 1 pulse
s Electrical Characteristics (TC = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF C oss ton tf td ( o f f ) Conditions VDS = 25V, VGS = 0 VGS = ±15V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 4V, ID = 0.5A VDS = 10V, ID = 0.5A IDR = 1A, VGS = 0 135 VDS = 10V, VGS = 0, f = 1MHz 85 50 VGS = 10V, ID = 0.5A VDD = 25V, RL = 50 120 390 800 0.6 25 1 220 390 1 -1 . 5 min typ max 10 ±10 45 2.5 380 680 Unit µA µA V V m m S V pF pF pF ns ns ns
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time)
1
Power Transistor Arrays (F-MOS FETs)
Area of safe operation (ASO)
10
PUB4702
ID VGS
2.00 VDS=10V Ta=25°C 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0
PD Ta
16
Allowable power dissipation PD (W)
Non repetitive pulse TC=25°C
14 12
3
(1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (1)
Drain current ID (A)
100ms 1 10ms
10 8 6 (2) 4 (3) 2 0
0.3
0.1
0.03 0.3
1
3
10
30
0
20
40
60
80 100 120 140 160
Drain current ID (A)
IDP
t=1ms
0
1
2
3
4
5
Drain to source voltage VDS (V)
Ambient temperature Ta (°C)
Gate to source voltage VGS (V)
RDS(on) ID
Drain to source ON-resistance RDS(on) (m)
700 2.5
| Yfs | ID
Forward transfer admittance |Yfs| (S)
VDS=10V Ta=25°C
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
103 f=1MHz Ta=25°C
Ta=150°C 600 85°C 25°C 400
2.0
500
1.5
Ciss 102 Coss
300
1.0
200
Crss
0.5
100 VGS=4V 0 0 1 2 3 4 5
0 0 0.5 1.0 1.5 2.0
10 0 5 10 15 20 25
Drain current ID (A)
Drain current ID (A)
Drain to source voltage VDS (V)
Rth(t) t
102 Notes: Rth was measured at Ta=25°C and under natural convection. Without heat sink
Thermal resistance Rth(t) (°C/W)
10
1
101 104
103
102
101
1
10
Time t (s)
2
|
|
