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Details, datasheet, quote on part number:PUB4753
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| Part: | PUB4753 |
| Category: | Discrete => Transistors => Bipolar => Bipolar Array => Power Transistor Arrays |
| Description: | V<SUB>CEO</SUB>(V) = 100 ;; I<SUB>C</SUB>(A) = 3 ;; P<SUB>D</SUB>(W) = 0.45 ;; Hfemin = 0.6 ;; HFE(max) = ;; T<SUB>on</SUB>(µs) = 0.2 ;; T<SUB>f</SUB>(µs) = 0.3 ;; Package = SIP10-A1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download PUB4753 datasheet File size : 93 kB |
| Request For quote: | Find where to buy PUB4753
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Datasheet text preview:
Power Transistor Arrays (F-MOS FETs)
PUB4753 (PU7457)
Silicon N-Channel Power F-MOS FET (with built-in zener diode)
I Features
G High avalanche energy capacity G High electrostatic breakdown voltage G No secondary breakdown G High breakdown voltage, large allowable power dissipation G Allowing Low-voltage drive G Contactless relay G Diving circuit for a solenoid G Driving circuit for a motor G Control equipment G Switching power supply
9.5±0.2 8.0±0.2
unit: mm
25.3±0.2
4.0±0.2
I Applications
0.8±0.25
1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5
0.5±0.15 1.0±0.25 2.54±0.2 9 × 2.54 = 22.86±0.25
0.5±0.15
I Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
C 1.5±0.5
Symbol VDSS VGSS ID I DP EAS* PD T ch Tstg
Ratings 100 ± 15 ±20 ±3 ±9 22.5 15 3.5 150 -55 to +150
Unit V V A A mJ W °C °C
1 2
1 2 3 4 5 6 7 8 9 10
DC Pulse Non repetition TC = 25°C Ta = 25°C
G: Gate D: Drain S: Source SIP10-A1 Package
Internal Connection
3 5 7 9
4
6
8
10
L = 5mH, IL = 3A, 1 pulse
I Electrical Characteristics (TC = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol I DSS I GSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF C oss ton tf t d(off) Conditions VDS = 80V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 2A VGS = 4V, ID = 2A VDS = 10V, ID = 2A IDR = 3A, VGS = 0 130 VDS = 10V, VGS = 0, f = 1MHz 160 25 VGS = 10V, ID = 2A VDD = 50V, RL = 25 0.2 0.3 1.5 2.5 85 1 300 400 4 -1 . 6 min typ max 10 ±10 115 2.5 450 600 Unit µA µA V V m m S V pF pF pF µs µs µs
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time)
Note) The part number in the parenthesis shows conventional part number.
225
Power Transistor Arrays (F-MOS FETs)
Area of safe operation (ASO)
100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 IDP t=100µs ID 1ms 10ms 100ms DC 24
PUB4753
EAS Tj
25
PD Ta
Avalanche energy capacity EAS (mJ) Allowable power dissipation PD (W)
(1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink
Non repetitive pulse TC=25°C
I D= 3 A
20
20
Drain current ID (A)
16 (1) 12
15
10
8 (2) 4
5
(3)
0 0 20 40 60 80 100 120 140 160
0 25
50
75
100
125
150
Drain to source voltage VDS (V)
Ambient temperature Ta (°C)
Junction temperature Tj (°C)
IAS L-load
10 TC=25°C 8 7
ID VGS
6 VDS=10V TC=25°C
Vth TC
VDS=10V ID=1mA 5
Avalanche current IAS (A)
3
ID
Drain current ID (A)
22.5mJ 1
6 5 4 3 2 1 0
Gate threshold voltage Vth (V)
0 1 2 3 4 5 6
4
0.3
3
0.1
2
0.03
1
0.01 1 3 10 30 100
0 0 25 50 75 100 125 150
L-load (mH)
Gate to source voltage VGS (V)
Case temperature TC (°C)
ID VDS
Drain to source ON-resistance RDS(on) ()
8 7 VGS=10V 6 5 4 3 3V 2 1 0 0 10 20 30 40 600
RDS(on) ID
5
| Yfs | ID
Forward transfer admittance |Yfs| (S)
TC=25°C VDS=10V TC=25°C 4
500 VGS=4V
Drain current ID (A)
4V 3.5V
400
3
300 10V 200
2
100
1
2.5V 15W 50 60
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Drain to source voltage VDS (V)
Drain current ID (A)
Drain current ID (A)
226
Power Transistor Arrays (F-MOS FETs)
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
104 f=1MHz TC=25°C 80
PUB4753
ton, tf, td(off) ID
16 I D= 3 A TC=25°C 14 12 10 VDS=25V 8 50V 6 4 2 VDS 0 12 4.0 3.5 VDD=50V VGS=10V TC=25°C
VDS, VGS Qg
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
70 60 50 40 30 20 10 0
103
Switching time ton,tf,td(off) (µs)
3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 td(off)
Co s s 102 Ci s s Cr s s 10
VGS
tf ton
1 0 20 40 60 80 100
0
2
4
6
8
10
Drain to source voltage VDS (V)
Gate charge amount Qg (nC)
Drain current ID (A)
PZSM tp
10000 3000 tp 1000 300 100 30 10 3 1 0.1
Zener diode power PZSM (W)
0.3
1
3
10
30
100
Pulse width tp (ms)
227
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