Details, datasheet, quote on part number: UN1110
PartUN1110
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.4 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = M-A1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN1110 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Note) The part numbers in the parenthesis show conventional part number.

Parameter Collector cutoff current UNR1112/1114/111E/111D UNR1113 Emitter cutoff current UNR1119 UNR1118/111L Collector to base voltage Collector to emitter voltage UNR1111 Forward current transfer ratio UNR1112/111E UNR1113/1114

Collector to emitter saturation voltage Output voltage high level Output voltage low level UNR111D UNR111E Transition frequency UNR1111/1114/1115 UNR1112/1117 Input resistance UNR1111/1112/1113/111L UNR1114 Resistance ratio UNR111F UNR111H




 

Related products with the same datasheet
UN1111
UN1112
UN1113
UN1114
UN1115
UN1116
UN1117
UN1118
UN1119
UN111D
UN111E
UN111F
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN1111 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.4 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = M-A1
UN1121 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.6 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = M-A1
UN1210 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.4 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = M-A1
UN1221 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.6 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = M-A1
UN1231 Marking = ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 0.01 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = M-A1
UN206 VCEO(V) = 18 ;; IC(A) = 1 ;; PT(W) = 0.5 ;; Package = SO10-G1
UN2110 Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1
UN2121 Marking = 7A ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.2 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = Mini3-G1
UN2154 Marking = ev ;; VCEO(V) = -30 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = Mini3-G1
UN216 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO14-G1
UN217 VCEO(V) = -10/10 ;; IC(A) = -1/1 ;; PT(W) = 0.5 ;; Package = SO10-G1
UN2210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1
UN222 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO14-G1
UN2221 Marking = 9A ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.2 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = Mini3-G1
UN2225 Marking = FZ ;; VCEO(V) = 20 ;; IC(A) = 0.6 ;; PT(W) = 0.2 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = Mini3-G1
UN225 VCEO(V) = -10/10 ;; IC(A) = -0.5/0.5 ;; PT(W) = 0.5 ;; Package = SO16-G1
Same catergory

2SK2195 : Power MOSFETs / Vx-ii Series (Three Terminal Type). Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply AC 100V input High voltage power supply Inverter Absolute Maximum Ratings iTc = 25j Item Symbol Conditions Storage Temperature T stg T ch Channel Temperature VDSS Drain-Source.

BSP762-T : Inexpensive High Side Switches. Overload protection Current limitation Short circuit protection Thermal shutdown with restart Fast demagnetization of inductive loads Reverse battery protection with external resistor CMOS compatible input Loss of GND and loss of Vbb protection ESD - Protection Very low standby current Product Summary Overvoltage protection Operating voltage On-state.

BZV8556 : Silicon Planar Power Zener Diodes. Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltage are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages upon request. DIM ENSIONS DIM inches Min. 1.102 Max. 0.110 0.031 Min. 28.0 mm Max. 2.8 0.8 Note Zener current see Table "Characteristics".

CMFBR-6F : Tiny Bridge Rectifier Monolithic Construction Fast Switching All Diodes Share Closely Matched Electricalcharacteristics. Very Small Size.

KSC5027 : NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature Value Units °C Symbol BVCBO BVCEO BVEBO.

KST5086 : Epitaxial. PNP Epitaxial Silicon Transistor. Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Symbol BVCBO BVCEO ICBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector.

STB45NF3LL : Low Voltage. N-channel 30V 0.014 Ohm 45A TO-220/TO-220FP/D2PAK StripFET ii Power MOSFET.

STS4DPFS30L : Low Voltage. P-channel 30V 0.07 Ohm 4A SO-8 StripFET MOSFET Plus Schottky Rectifier.

TPIC2202 : Array. 2-channel Common-source Power Dmos Array. Two 7.5-A Independent Output Channels, Continuous Current Per Channel Low rDS(on). 0.09 Typical Output Voltage. 60 V Pulsed Current. 15 A Per Channel Avalanche Energy. 120 mJ The is a monolithic power DMOS array that consists of two independent N-channel enhancement-mode DMOS transistors connected in a common-source configuration with open drains. absolute.

NTLJF3117P : Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, µCool™ Package Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, µCool™ Package FETKY™ Configuration with MOSFET plus Low Vf Schottky Diode µCool™ Package Provides Exposed Drain Pad for Excellent Thermal.

03029BR101AKM : CAP,CERAMIC,100PF,50VDC,10% -TOL,10% +TOL,BR TC CODE,-15,15% TC,0402 CASE. s: Dielectric: Ceramic Composition.

BCAP0650E270 : CAPACITOR, ELECTRIC DOUBLE LAYER, 2.7 V, 650000000 uF, STUD MOUNT. s: Technology: ELECTRIC DOUBLE LAYER ; Applications: General Purpose ; RoHS Compliant: Yes ; Capacitance Range: 6.50E8 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 2.7 volts ; Mounting Style: STUD MOUNT ; Operating Temperature: -40 to 65 C (-40 to 149 F).

MMD0125K10300000000 : CAPACITOR, METALLIZED FILM, POLYESTER, 0.01 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polyester ; RoHS Compliant: Yes ; Capacitance Range: 0.0100 microF ; Capacitance Tolerance: 10 (+/- %) ; Mounting Style: Through Hole ; Operating.

UMA1NTN : 30 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: UMT5, SC-88A, 5 PIN.

VIT2080C-M3/4W : 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-262AA. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 10000 mA ; Package: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.

50648R : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).

 
0-C     D-L     M-R     S-Z