Details, datasheet, quote on part number: UN2121
PartUN2121
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 7A ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.5 ;; P<SUB>T</SUB>(W) = 0.2 ;; R<SUB>1</SUB>(kW ) = 2.2 ;; R<SUB>2</SUB>(kW ) = 2.2 ;; Package = Mini3-G1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN2121 datasheet
Cross ref.Similar parts: BCR553
Quote
Find where to buy
 
  

 

Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating to +150 Unit R2 E

Parameter Collector cutoff current UNR212X Collector cutoff current UNR212X Emitter cutoff current UNR2122/212X/212Y UNR2123/2124 VCBO hFE = -10 ÁA, = 0 VCE -100 mA Note) The part numbers in the parenthesis show conventional part number.

Collector to base voltage Forward current transfer ratio UNR2123/2124 UNR212X

Parameter Collector to emitter saturation voltage UNR212X UNR212Y Output voltage high level Output voltage low level Transition frequency Input resistance UNR212X UNR212Y Resistance ratio R1/R2 0.8 VOH VOL fT R1 Symbol VCE(sat) Conditions = -100 mA, = -10 mA, = -50 mA, -5 mA VCC = 500 VCC = 500 VCB = 50 mA, = 200 MHz Min Typ Max V MHz k Unit V





 

Related products with the same datasheet
UN2122
UN2123
UN2124
UN212X
UN212Y
UNR2121
UNR2121UN2121
UNR2122
UNR2122UN2122
UNR2123
UNR2123UN2123
UNR2124
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN2122 Marking = 7A ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.2 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = Mini3-G1
UN2154 Marking = ev ;; VCEO(V) = -30 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = Mini3-G1
UN216 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO14-G1
UN217 VCEO(V) = -10/10 ;; IC(A) = -1/1 ;; PT(W) = 0.5 ;; Package = SO10-G1
UN2210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1
UN222 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO14-G1
UN2221 Marking = 9A ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.2 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = Mini3-G1
UN2225 Marking = FZ ;; VCEO(V) = 20 ;; IC(A) = 0.6 ;; PT(W) = 0.2 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = Mini3-G1
UN225 VCEO(V) = -10/10 ;; IC(A) = -0.5/0.5 ;; PT(W) = 0.5 ;; Package = SO16-G1
UN227 VCEO(V) = -10/10 ;; IC(A) = -1.5/1.5 ;; PT(W) = 0.5 ;; Package = SO16-G1
UN228 VCEO(V) = -10/10 ;; IC(A) = -1/1 ;; PT(W) = 0.5 ;; Package = SO10-G1
UN230 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO10-G1
UN4110 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
UN4121 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UN4210 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
UN4221 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UN5110 Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
Same catergory

3EZ100D5 : Plastic Axial.

LCE65 : Transient Absorption Zener.

STP5NK80ZFP-H : Power MOSFETs N-Channel (>400V To 650V) N-channel 800 V, 1.9 ?, 4.3 A, TO-220FP Zener-protected SuperMESHÖ Power MOSFET.

03028-BR471AKZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.00047 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 4.70E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

05002130CGZB : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000013 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.30E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/┬░C ; Mounting Style: Surface Mount Technology.

0805Y331M160N : CAPACITOR, CERAMIC, MULTILAYER, 16 V, Y5V, 0.00033 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.30E-4 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 16 volts ; Mounting Style:.

BAS16WT/R13 : 0.15 A, 100 V, SILICON, SIGNAL DIODE. s: Package: ROHS COMPLIANT, PLASTIC PACKAGE-3 ; Number of Diodes: 1 ; IF: 150 mA ; RoHS Compliant: RoHS.

BYG22AHM3/TR : 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC. s: Package: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 2000 mA ; trr: 0.0250 ns.

CT02-300 : 18 A CURRENT SENSE TRANSFORMER. s: Transformer Type: Current-Sense ; Secondary Current Rating: 18 amps ; Operating Temperature: -40 to 130 C (-40 to 266 F) ; Standards: RoHS.

MFM0204 : RESISTOR, METAL FILM, 0.125; 0.25 W, 1; 5 %, 50 ppm, 0.22 ohm - 2000000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), MELF, ROHS COMPLIANT.

MLG1608A10NJ : 1 ELEMENT, 0.01 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Application: General Purpose, RF Choke ; Inductance Range: 0.0100 microH ; Rated DC Current: 300 milliamps.

SDA180AA : 5 A, 50 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Anode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, ULTRA FAST RECOVERY ; IF: 5000 mA ; Package: HERMETIC SEALED PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.

SHD1252D : 30 A, SILICON, RECTIFIER DIODE, TO-254AA. s: Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 30000 mA ; Package: TO-254, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

1812B223K251NT : CAP,CERAMIC,22NF,250VDC,10% -TOL,10% +TOL,X7R TC CODE,-15,15% TC,1812 CASE. s: Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition.

2101MFM2225LHN0110 : CAP,AL2O3,100UF,350VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

256C : RESISTOR, NETWORK, FILM, BUSSED; ISOLATED; TERMINATOR, 0.6; 0.8; 1 W, THROUGH HOLE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: ThroughHole, SIP ; Temperature Coefficient: 50 ┬▒ppm/┬░C ; Operating DC Voltage: 50 volts ; Operating Temperature: -55 to 70 C (-67.

 
0-C     D-L     M-R     S-Z