|Category||Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)|
|Title||RETs (Resistor Equipped transistors)|
|Description||Marking = ev ;; V<SUB>CEO</SUB>(V) = -30 ;; I<SUB>C</SUB>(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.2 ;; R<SUB>1</SUB>(kW ) = 10 ;; R<SUB>2</SUB>(kW ) = 47 ;; Package = Mini3-G1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download UN2154 datasheet
High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating to +150 Unit mW °C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio IEBO VCBO VCEO hFE VCE(sat) VOH VOL R1 R1/R2 Conditions VCB = 0 VCE = 0 VEB = -10 µA, = -2 mA, = 0 VCE = -50 mA, 0.33 mA VCC 1 k VCC 1 k VCB = 1 mA, = 200 MHz V MHz k Min Typ Max mA V Unit µANote) The part number in the parenthesis shows conventional part number.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
|Related products with the same datasheet|
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|UN216 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO14-G1|
|UN217 VCEO(V) = -10/10 ;; IC(A) = -1/1 ;; PT(W) = 0.5 ;; Package = SO10-G1|
|UN2210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1|
|UN222 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO14-G1|
|UN2221 Marking = 9A ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.2 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = Mini3-G1|
|UN2225 Marking = FZ ;; VCEO(V) = 20 ;; IC(A) = 0.6 ;; PT(W) = 0.2 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = Mini3-G1|
|UN225 VCEO(V) = -10/10 ;; IC(A) = -0.5/0.5 ;; PT(W) = 0.5 ;; Package = SO16-G1|
|UN227 VCEO(V) = -10/10 ;; IC(A) = -1.5/1.5 ;; PT(W) = 0.5 ;; Package = SO16-G1|
|UN228 VCEO(V) = -10/10 ;; IC(A) = -1/1 ;; PT(W) = 0.5 ;; Package = SO10-G1|
|UN230 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO10-G1|
|UN4110 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1|
|UN4121 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
|UN4210 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1|
|UN4221 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
|UN5110 Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1|
|UN5154 Marking = ev ;; VCEO(V) = -30 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(kW ) = 0.213 ;; Package = SMini3-G1|
|UN5210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1|
2N6534B : Screening Options Available = ;; Polarity = NPN ;; Package = TO66 (TO213AA) ;; Vceo = 80V ;; IC(cont) = 8A ;; HFE(min) = 100 ;; HFE(max) = 5000 ;; @ Vce/ic = 3V / 8A ;; FT = 20MHz ;; PD = 14W.
3.0SMCJ : Feature = ;; Power / Current Unit = 3000 Watt ;; Voltage Range (V) = 5.0-100V.
BC817 : NPN General Purpose Transistorcollector Current Capability ic = 500 ma Collector-emitter Voltage VCEO(max) =45 V. Applications General Purpose Switching And Amplification..
BUZ100LC67078-S1348-A2 : Transistor MOSFET To-220. SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Ultra low on-resistance 175 °C operating temperature also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A Gate source voltage Gate-source peak voltage,aperiodic Power dissipation Maximum.
FS2VS-12 : Type = Planar Process=>200V ;; Voltage = 600V ;; Rdson = 6400 ;; Package = Obsolete ;; Drive Voltage = N/a.
GFB75N03 : N-channel Enhancement-mode MOSFET. Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 1.3g Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching.
KSE5740 : NPN Silicon Darlington Transistor. High Voltage Power Switching In Inductive Circuits High Voltage Power Darlington TR Small Engine lgnition Switching Regulators Inverters Solenold and Relay Drivers Motor Control Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol BVCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSE5742 Collector-Emitter Voltage : KSE5742 Emitter-Base.
SF61 : Glass Passivated.
Z0103MA2AL2 : 1a Triacs. The Z01 series is suitable for general purpose AC switching applications. They can be found in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers, Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers. Symbol IT(RMS).
05002130CMMP : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000013 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.30E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/Â°C ; Mounting Style:.
0508F222J160C : CAPACITOR, CERAMIC, MULTILAYER, 16 V, Y5V, 0.0022 uF, SURFACE MOUNT, 0508. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0022 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 16 volts ; Mounting Style: Surface Mount Technology.
FT0610BH00TU : 200 V, 6 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB. s: Thyristor Type: Triac, 4 QUADRANT LOGIC LEVEL TRIAC ; Package Type: PLASTIC PACKAGE-3 ; Pin Count: 3 ; VDRM: 200 volts ; IT(RMS): 6 amps ; Standards and Certifications: RoHS.
PUMD18/T1 : 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: Complementary ; Package Type: PLASTIC, SMD, SC-88, 6 PIN.
S558-10GB-02 : DATACOM TRANSFORMER FOR ETHERNET; 10G BASE-T APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer.
2N7621T2 : 1600 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; Package Type: TO-3, TO-39, HERMETIC SEALED, MODIFIED TO-39, 3 PIN ; Number of units in IC: 1.
2SC1009A-A : 50 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: MINIMOLD, SC-59, 3 PIN.
68140 : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -55 to 130 C (-67 to 266 F).