Details, datasheet, quote on part number: UN225
PartUN225
CategoryDiscrete => Transistors => Bipolar => Bipolar Array => Small Signal Transistor Arrays
TitleSmall Signal Transistor Arrays
DescriptionV<SUB>CEO</SUB>(V) = -10/10 ;; I<SUB>C</SUB>(A) = -0.5/0.5 ;; P<SUB>T</SUB>(W) = 0.5 ;; Package = SO16-G1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN225 datasheet
Cross ref.Similar parts: UNA0225
Quote
Find where to buy
 
  

 

Features, Applications

Transistor array to drive the small motor s Features

Small and lightweight Low power consumption (low VCE(sat) transistor used) Low-voltage drive With 8 elements incorporated (SO16)

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT* Tj Tstg

Video cameras Cameras Portable CD players Small motor drive circuits in general for electronic equipment.

Note: marks used above: NPN part, PNP part = 25C only when the elements are active
Note.) The Part number in the Parenthesis shows conventional part number.

Symbol ICBO VCBO VCEO VEBO hFE VCE(sat)1 fT Cob VF Conditions (NPN) VCB = 7V (PNP) VCB = 7V (NPN) = 10A (PNP) = 10A (NPN) = 1mA (PNP) = 1mA (NPN) = 10A (PNP) = 10A (NPN) VCE = 0.2A* (PNP) VCE 0.2A* (NPN) = 2mA (PNP) = 2mA (NPN) VCB = 200MHz (PNP) VCB = 200MHz (NPN) VCB = 1MHz (PNP) VCB = 1MHz (NPN) = 0.5A (PNP) 0.5A V min typ max 1 1 Unit A






 

Related products with the same datasheet
UNA0225
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN227 VCEO(V) = -10/10 ;; IC(A) = -1.5/1.5 ;; PT(W) = 0.5 ;; Package = SO16-G1
UN228 VCEO(V) = -10/10 ;; IC(A) = -1/1 ;; PT(W) = 0.5 ;; Package = SO10-G1
UN230 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO10-G1
UN4110 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
UN4121 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UN4210 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
UN4221 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UN5110 Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UN5154 Marking = ev ;; VCEO(V) = -30 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(kW ) = 0.213 ;; Package = SMini3-G1
UN5210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UN6110 Silicon PNP Epitaxial Planer Transistor
Same catergory

181RKI : Phase Control Thyristors. Hermetic glass-metal seal dv/dt = 1000V/s option International standard case TO-209AB (TO-93) Threaded studs UNF - 16UNF2A Typical Applications DC motor controls Controlled DC power supplies AC controllers V DRM/V RRM , max. repetitive peak and off-state voltage V I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current.

2SC458K : Silicon NPN Epitaxial. Application Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO PC Tj Tstg Ratings to +150 Unit mW C Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 5 Collector to emitter breakdown.

2SD1226M : Medium Power Amp. Epitaxial Planar NPN Silicon Transistors.

ARF448A : 150V, 250W, RF Power MOSFET. The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications to 65 MHz. Specified 150 Volt, 40.68 MHz Characteristics: Output Power = 250 Watts. Gain = 15dB (Class C) Efficiency = 75% Symbol VDSS VDGO ID VGS PD RJC TJ,TSTG.

BDW83A : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 60V ;; IC(cont) = 15A ;; HFE(min) = 750 ;; HFE(max) = 20000 ;; @ Vce/ic = 3V / 6A ;; FT = 1MHz ;; PD = 150W.

DF200BA40 : Three Phase Diode Modules(Bridge). UL;E76102 M Power Diode Module DF200BA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. Output DC current Tc 102 Repetitive peak reverse voltage to 800V. TjMax.

NTHD4102PT1 : ChipFET P-ch Dual Trench, Package: ChipFET, Pins=8. Offers an Ultra Low RDS(ON) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required Operated at Standard Logic Level Gate Drive, Facilitating Future Migration.

SF3L60U : Super Fast Recoveryrectifiers / Single (Two Terminal Type). Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Max Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, resistance load, Tc=115 I FSM Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Vdis Terminals to case, AC 1 minute.

IXZ308N120 : 1200V (max) Switch Mode MOSFETS The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching, including laser driver, induction heating, switch mode power supplies and other switching industrial applications.e.

000-6181-37R : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).

0306 : CAPACITOR, CERAMIC, MULTILAYER, 4 - 25 V, SURFACE MOUNT, ; 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Surface Mount Technology ; Operating Temperature: -55 to 125 C (-67 to 257 F).

05002240BFMB : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BP, 0.000024 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 2.40E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

BC478AG4 : 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA. s: Polarity: PNP ; Package Type: HERMETIC SEALED, METAL, TO-18, 3 PIN.

CDSH-2BK : 0.2 A, 20 V, SILICON, SIGNAL DIODE, DO-35. s: Diode Type: General Purpose ; IF: 200 mA ; trr: 0.0050 ns.

HHM1727D1 : 3300 MHz - 3900 MHz RF TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: RF ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).

KTN2907AE : 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: ESM, 3 PIN.

PUMD15,125 : SMALL SIGNAL TRANSISTOR. NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Package NXP SOT666 SOT363 JEITA SC-88 PNP/PNP complement PEMB15 PUMB15 NPN/NPN complement PEMH15 PUMH15 Package configuration ultra small and flat lead very small 100 mA output current capability Built-in bias resistors Simplifies.

T2-5A100K : IND,IRON,10UH,10% +TOL,10% -TOL. s: Application: General Purpose. RIPPLE FILTERING HIGH CURRENT TOROIDAL INDUCTOR SERIES T2 Characterized for general purpose use Ripple filtering Can be used as differential mode inductors in EMI Filters Self electromagnetic shielding Lowest price ELECTRICAL CHARACTERISTICS - Inductance range to 150H. These values are typical inductances obtained at rated current. For measurement.

XCTT : RESISTOR, NETWORK, FILM, DIVIDER, 0.125 W, SURFACE MOUNT, 0303. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Operating DC Voltage: 100 volts ; Operating Temperature: -55 to 150 C (-67 to 302 F).

1825J0100100FCR : CAPACITOR, CERAMIC, MULTILAYER, 10 V, C0G, 0.00001 uF, SURFACE MOUNT, 1825. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 10 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

 
0-C     D-L     M-R     S-Z