Details, datasheet, quote on part number: UN4219
PartUN4219
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; P<SUB>T</SUB>(W) = 0.3 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = NS-A1NS-B1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN4219 datasheet
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Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Note.) The Part numbers in the Parenthesis show conventional part number.

Parameter Collector cutoff current UNR4212/4214/421E/421D UNR4213 Emitter cutoff current UNR4219 UNR4218/421L Collector to base voltage Collector to emitter voltage UNR4211 Forward current transfer ratio UNR421F/421D/4219 UNR4218/421K/421L Collector to emitter saturation voltage Output voltage high level Output voltage low level UNR421D UNR421E Transition frequency UNR4211/4214/4215/421K UNR4212/4217 Input resistance UNR4211/4212/4213/421L UNR4214 Resistance ratio UNR421F UNR421K



 

Related products with the same datasheet
UN4211
UN4212
UN4213
UN4214
UN4215
UN4216
UN4217
UN4218
UN421D
UN421E
UN421F
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN421D Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
UN4221 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UN5110 Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UN5154 Marking = ev ;; VCEO(V) = -30 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(kW ) = 0.213 ;; Package = SMini3-G1
UN5210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UN6110 Silicon PNP Epitaxial Planer Transistor
UN6121
UN6210 Silicon NPN Epitaxial Planer Transistor
UN7231 Marking = ic ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MiniP3-F1
UN8231 Marking = ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MT-2-A1
UN9110 Silicon PNP Epitaxial Planer Transistor
UN9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9111 Silicon PNP Epitaxial Planer Transistor
UN9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9112 Silicon PNP Epitaxial Planer Transistor
UN9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9113 Silicon PNP Epitaxial Planer Transistor

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