Details, datasheet, quote on part number: UN4221
PartUN4221
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.5 ;; P<SUB>T</SUB>(W) = 0.3 ;; R<SUB>1</SUB>(kW ) = 2.2 ;; R<SUB>2</SUB>(kW ) = 2.2 ;; Package = NS-A1NS-B1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN4221 datasheet
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Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Parameter Collector cutoff current Emitter cutoff current UNR4222 UNR4223/4224

Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL R1 Conditions VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCC = 500 VCC RL R1/R2 min typ max V mA Unit A

Collector to base voltage Collector to emitter voltage Forward current transfer ratio UNR4222 UNR4223/4224

Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance UNR4222 UNR4223

Note) The Part numbers in the Parenthesis show conventional part number.





 

Related products with the same datasheet
UN4222
UN4223
UN4224
UNR4221
UNR4222
UNR4223
UNR4224
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN4222 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UN5110 Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UN5154 Marking = ev ;; VCEO(V) = -30 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(kW ) = 0.213 ;; Package = SMini3-G1
UN5210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UN6110 Silicon PNP Epitaxial Planer Transistor
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UN6210 Silicon NPN Epitaxial Planer Transistor
UN7231 Marking = ic ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MiniP3-F1
UN8231 Marking = ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MT-2-A1
UN9110 Silicon PNP Epitaxial Planer Transistor
UN9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9111 Silicon PNP Epitaxial Planer Transistor
UN9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9112 Silicon PNP Epitaxial Planer Transistor
UN9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9113 Silicon PNP Epitaxial Planer Transistor
UN9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9114 Silicon PNP Epitaxial Planer Transistor
UN9114J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9115 Silicon PNP Epitaxial Planer Transistor
UN9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
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