Details, datasheet, quote on part number: UN511T
PartUN511T
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 6L ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = SMini3-G1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN511T datasheet
Cross ref.Similar parts: UNR511T
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Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Note) The Part numbers in the Parenthesis show conventional part number.

Parameter Collector cutoff current UNR5112/5114/511E/511D/511M/511N/511T UNR5113 Emitter cutoff current UNR5118/511L/511V UNR511Z Collector to base voltage UNR511N/511T/511V/511Z Collector to emitter voltage UNR5112/511E UNR5113/5114/511M Forward current transfer ratio UNR511V UNR511Z Collector to emitter saturation voltage UNR511V Output voltage high level Output voltage low level UNR511D UNR511E Transition frequency UNR5112/5117/511T UNR5113/5110/511D/511E Input resistance UNR5119 UNR511H/511M/511V


 

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UN511V Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UN5154 Marking = ev ;; VCEO(V) = -30 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(kW ) = 0.213 ;; Package = SMini3-G1
UN5210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
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UN7231 Marking = ic ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MiniP3-F1
UN8231 Marking = ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MT-2-A1
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UN9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
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UN9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
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UN9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9113 Silicon PNP Epitaxial Planer Transistor
UN9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9114 Silicon PNP Epitaxial Planer Transistor
UN9114J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
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UN9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
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