|Category||Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)|
|Title||RETs (Resistor Equipped transistors)|
|Description||Marking = ev ;; V<SUB>CEO</SUB>(V) = -30 ;; I<SUB>C</SUB>(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = 10 ;; R<SUB>2</SUB>(kW ) = 0.213 ;; Package = SMini3-G1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download UN5154 datasheet
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing.
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency
Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1/R2 fT VCB = 200MHz Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE 0.33mA VCC = 1k VCC = 1k min typ max Unit µA mA MHzNote) The Part number in the Parenthesis shows conventional part number.
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|UN9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
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