Details, datasheet, quote on part number: UN5212
PartUN5212
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 8L ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = SMini3-G1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN5212 datasheet
Cross ref.Similar parts: DDTC124ECA, DTC124EUAT106, DTC124EKAT146, RN1303, DDTC124EUA, UNR5212
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Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Note.) The Part numbers in the Parenthesis show conventional part number.

Parameter Collector cutoff current UNR5212/5214/521E/521D/521M/521N/521T UNR5213 Emitter cutoff current UNR5218/521L/521V UNR521Z Collector to base voltage Collector to emitter voltage UNR5212/521E UNR5213/5214/521M Forward current transfer ratio UNR521V UNR521Z Collector to emitter saturation voltage UNR521V Output voltage high level Output voltage low level UNR521D UNR521E Transition frequency UNR5211/5214/5215/521K UNR5212/5217/521T Input resistance UNR5219 UNR521M/521V

Symbol ICBO ICEO Conditions VCB = 0 VCE = 0 min typ max IEBO VEB 6V, IC VCBO VCEO 2mA, IB hFE VCE = 5mA VCE(sat) VOH = 1.5mA VCC = 1k VCC = 1k VOL VOC = 1k VCC = 1k VCC 1k fT VCB R1 k MHz V mA Unit A


 

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Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN5213 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
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UN7231 Marking = ic ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MiniP3-F1
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UN9110 Silicon PNP Epitaxial Planer Transistor
UN9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9111 Silicon PNP Epitaxial Planer Transistor
UN9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9112 Silicon PNP Epitaxial Planer Transistor
UN9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9113 Silicon PNP Epitaxial Planer Transistor
UN9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9114 Silicon PNP Epitaxial Planer Transistor
UN9114J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9115 Silicon PNP Epitaxial Planer Transistor
UN9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9116 Silicon PNP Epitaxial Planer Transistor
UN9116J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
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