Details, datasheet, quote on part number: UN5218
PartUN5218
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 8L ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = SMini3-G1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN5218 datasheet
Cross ref.Similar parts: UNR5218
Quote
Find where to buy
 
  

 

Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Note.) The Part numbers in the Parenthesis show conventional part number.

Parameter Collector cutoff current UNR5212/5214/521E/521D/521M/521N/521T UNR5213 Emitter cutoff current UNR5218/521L/521V UNR521Z Collector to base voltage Collector to emitter voltage UNR5212/521E UNR5213/5214/521M Forward current transfer ratio UNR521V UNR521Z Collector to emitter saturation voltage UNR521V Output voltage high level Output voltage low level UNR521D UNR521E Transition frequency UNR5211/5214/5215/521K UNR5212/5217/521T Input resistance UNR5219 UNR521M/521V

Symbol ICBO ICEO Conditions VCB = 0 VCE = 0 min typ max IEBO VEB 6V, IC VCBO VCEO 2mA, IB hFE VCE = 5mA VCE(sat) VOH = 1.5mA VCC = 1k VCC = 1k VOL VOC = 1k VCC = 1k VCC 1k fT VCB R1 k MHz V mA Unit A


 

Related products with the same datasheet
UN5211
UN5212
UN5213
UN5214
UN5215
UN5216
UN5217
UN5219
UN521D
UN521E
UN521F
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN5219 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UN6110 Silicon PNP Epitaxial Planer Transistor
UN6121
UN6210 Silicon NPN Epitaxial Planer Transistor
UN7231 Marking = ic ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MiniP3-F1
UN8231 Marking = ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MT-2-A1
UN9110 Silicon PNP Epitaxial Planer Transistor
UN9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9111 Silicon PNP Epitaxial Planer Transistor
UN9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9112 Silicon PNP Epitaxial Planer Transistor
UN9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9113 Silicon PNP Epitaxial Planer Transistor
UN9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9114 Silicon PNP Epitaxial Planer Transistor
UN9114J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9115 Silicon PNP Epitaxial Planer Transistor
UN9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9116 Silicon PNP Epitaxial Planer Transistor
UN9116J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9117 Silicon PNP Epitaxial Planer Transistor

2SB937AP : Si PNP Epitaxial Planar

EEUFC1A102H : Aluminum Electrolytic Capacitors/fc

EEUEB1H470 : Aluminum Electrolytic Capacitor/eb

ELL-6SH391M : Fixed Inductors, Coils, Choke 390H 210mA 0.251" L x 0.236" W x 0.129" H (6.40mm x 6.00mm x 3.30mm) -; COIL 390UH 210MA CHOKE SMD Specifications: Inductance: 390H ; Tolerance: 20% ; Package / Case: 0.251" L x 0.236" W x 0.129" H (6.40mm x 6.00mm x 3.30mm) ; Packaging: Digi-Reel ; Type: - ; Current: 210mA ; Mounting Type: Surface Mount ; Q @ Freq: - ; Frequency - Self Resonant: - ; DC Resistance (DCR): 2.8 Ohm ; Shielding: S

ELL-6PG6R8N : Fixed Inductors, Coils, Choke 6.8H 1.4A 0.236" L x 0.236" W x 0.078" H (6.00mm x 6.00mm x 2.00mm) -; COIL CHOKE 6.8UH SHIELDED SMD Specifications: Inductance: 6.8H ; Tolerance: 30% ; Package / Case: 0.236" L x 0.236" W x 0.078" H (6.00mm x 6.00mm x 2.00mm) ; Packaging: Cut Tape (CT) ; Type: - ; Current: 1.4A ; Mounting Type: Surface Mount ; Q @ Freq: - ; Frequency - Self Resonant: - ; DC Resistance (DCR): 70 mOhm ; Shielding:

ERO-S2PHF2802 : 28K Ohm 0.25W, 1/4W Through Hole Resistors; RES 28.0K OHM METAL FILM 1/4W 1% Specifications: Resistance (Ohms): 28K ; Power (Watts): 0.25W, 1/4W ; Tolerance: 1% ; Packaging: Tape & Box (TB) ; Composition: Metal Film ; Temperature Coefficient: 50ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

MA22D3900L : Diodes, Rectifier - Single Discrete Semiconductor Product 1.57A 40V Schottky; DIODE SCHOTTKY 1.57ARMS MINI2P Specifications: Diode Type: Schottky ; Voltage - DC Reverse (Vr) (Max): 40V ; Current - Average Rectified (Io): 1.57A ; Voltage - Forward (Vf) (Max) @ If: 570mV @ 1.5A ; Reverse Recovery Time (trr): 30ns ; Current - Reverse Leakage @ Vr: 100A @ 40V ; Speed: Fast Recovery =< 500ns,>200mA (Io) ; M

EHF4CM1950 : 1850 MHz - 1950 MHz RF/MICROWAVE DIRECTIONAL COUPLER Specifications: RF Coupler Type: Uni-Directional ; Package Type: 1.60 X 0.80 MM, 0.55 MM HEIGHT, MINIATURE PACKAGE ; Frequency Range: 1850.00 to 1950.00 MHz

 
0-C     D-L     M-R     S-Z