Details, datasheet, quote on part number: UN611D
PartUN611D
CategoryDiscrete => Transistors => Bipolar => General Purpose => PNP
DescriptionSilicon PNP Epitaxial Planer Transistor
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN611D datasheet
  

 

Features, Applications

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping.

Parameter Collector cutoff current UN6111 UN6112/6114/611E/611D Emitter cutoff current UN6119 UN6118/611L Collector to base voltage Collector to emitter voltage UN6111 UN6112/611E Forward current transfer ratio UN611F/611D/6119/611H UN6118/611L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN611D UN611E Transition frequency UN6111/6114/6115 UN6112/6117 Input resistance UN6111/6112/6113/611L UN6114 Resistance ratio UN611F UN611H




 

Related products with the same datasheet
UN6111
UN6112
UN6113
UN6114
UN6115
UN6116
UN6117
UN6118
UN6119
UN611E
UN611F
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN611E Silicon PNP Epitaxial Planer Transistor
UN6121
UN6210 Silicon NPN Epitaxial Planer Transistor
UN7231 Marking = ic ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MiniP3-F1
UN8231 Marking = ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MT-2-A1
UN9110 Silicon PNP Epitaxial Planer Transistor
UN9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9111 Silicon PNP Epitaxial Planer Transistor
UN9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9112 Silicon PNP Epitaxial Planer Transistor
UN9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9113 Silicon PNP Epitaxial Planer Transistor
UN9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9114 Silicon PNP Epitaxial Planer Transistor
UN9114J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9115 Silicon PNP Epitaxial Planer Transistor
UN9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9116 Silicon PNP Epitaxial Planer Transistor
UN9116J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9117 Silicon PNP Epitaxial Planer Transistor
UN9117J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1

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