Details, datasheet, quote on part number: UN6123
PartUN6123
CategoryDiscrete => Transistors => Bipolar => General Purpose => PNP
DescriptionSilicon PNP Epitaxial Planer Transistor
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN6123 datasheet
  

 

Features, Applications

Features

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Parameter Collector cutoff current UN612X Collector cutoff current UN612X Emitter cutoff current UN6122/612X/612Y UN6123/6124

Symbol ICBO ICEO IEBO VCBO VCEO Conditions VCB = 0 VCB = 0 VCE = 0 VCE = 0 VEE ­2mA, IB hFE VCE 60 20 VCE(sat) VOH VOL = ­5mA VCC = 500 VCC = 500 VCB k V MHz V min typ max V mA Unit ľA

Collector to base voltage Collector to emitter voltage Forward current transfer ratio UN6123/6124 UN612X

Collector to emitter saturation voltage UN612X UN612Y Output voltage high level Output voltage low level Transition frequency UN6121 Input resistance UN612X UN612Y Resistance ratio UN612X UN612Y




 

Related products with the same datasheet
UN6122
UN6124
UN612X
UN612Y
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN6124 Silicon PNP Epitaxial Planer Transistor
UN6210 Silicon NPN Epitaxial Planer Transistor
UN7231 Marking = ic ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MiniP3-F1
UN8231 Marking = ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MT-2-A1
UN9110 Silicon PNP Epitaxial Planer Transistor
UN9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9111 Silicon PNP Epitaxial Planer Transistor
UN9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9112 Silicon PNP Epitaxial Planer Transistor
UN9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9113 Silicon PNP Epitaxial Planer Transistor
UN9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9114 Silicon PNP Epitaxial Planer Transistor
UN9114J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9115 Silicon PNP Epitaxial Planer Transistor
UN9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9116 Silicon PNP Epitaxial Planer Transistor
UN9116J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9117 Silicon PNP Epitaxial Planer Transistor
UN9117J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9118 Silicon PNP Epitaxial Planer Transistor
 
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