Details, datasheet, quote on part number: UN6224
PartUN6224
CategoryDiscrete => Transistors => Bipolar => General Purpose => NPN
DescriptionSilicon NPN Epitaxial Planer Transistor
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN6224 datasheet
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Features, Applications

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping.

Parameter Collector cutoff current UN6211 UN6212/6214/621E/621D Emitter cutoff current UN6219 UN6218/621L Collector to base voltage Collector to emitter voltage UN6211 UN6212/621E Forward current transfer ratio UN621F/621D/6219 UN6218/621K/621L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN621D UN621E Transition frequency UN6211/6214/6215/621K UN6212/6217 Input resistance UN6211/6212/6213/621L UN6214 Resistance ratio UN621F UN621K




 

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UN6211
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UN6218
UN6219
UN621D
UN621E
UN621F
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN7231 Marking = ic ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MiniP3-F1
UN8231 Marking = ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MT-2-A1
UN9110 Silicon PNP Epitaxial Planer Transistor
UN9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9111 Silicon PNP Epitaxial Planer Transistor
UN9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9112 Silicon PNP Epitaxial Planer Transistor
UN9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9113 Silicon PNP Epitaxial Planer Transistor
UN9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9114 Silicon PNP Epitaxial Planer Transistor
UN9114J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9115 Silicon PNP Epitaxial Planer Transistor
UN9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9116 Silicon PNP Epitaxial Planer Transistor
UN9116J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9117 Silicon PNP Epitaxial Planer Transistor
UN9117J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9118 Silicon PNP Epitaxial Planer Transistor
UN9118J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9119 Silicon PNP Epitaxial Planer Transistor

CNZ2152 : Featuresapplications = High Speed Response ;; IF(mA) = 100 ;; VCEO(V)(V) = 20 ;; ICmin.(mA) = 0.8 ;; ICEOmax.(µA)(µA) = 2 ;; Tr;; Tf

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