|Category||Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)|
|Title||RETs (Resistor Equipped transistors)|
|Description||Marking = ic ;; V<SUB>CEO</SUB>(V) = 20 ;; I<SUB>C</SUB>(A) = 0.7 ;; P<SUB>T</SUB>(W) = 1 ;; R<SUB>1</SUB>(kW ) = 1 ;; R<SUB>2</SUB>(kW ) = 0.021 ;; Package = MiniP3-F1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download UN7231 datasheet
|Cross ref.||Similar parts: UNR7231|
High forward current transfer ratio hFE Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
Parameter Collector to base voltage Collector to emitter voltage Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC ICP PT* Tj Tstg
* Printed circuit board: Copper foil area 1cm2 or more and thickness of 1.7mm for the collector portion.
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Input resistance Resistance ratio
Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) R1 R1/R2 Conditions VCB = 0 VCE = 0 VEB = 0 VCE = 5mA* VCB = 200MHz *Pulse measurement V MHz k min typ max 10 0.5 Unit mA VNote) The Part number in the Parenthesis shows conventional part number.
Copper foil area 1cm2 or more and thickness of 1.7mm for the collector portion.
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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|UN8231 Marking = ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MT-2-A1|
|UN9110 Silicon PNP Epitaxial Planer Transistor|
|UN9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
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|UN9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
|UN9112 Silicon PNP Epitaxial Planer Transistor|
|UN9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
|UN9113 Silicon PNP Epitaxial Planer Transistor|
|UN9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
|UN9114 Silicon PNP Epitaxial Planer Transistor|
|UN9114J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
|UN9115 Silicon PNP Epitaxial Planer Transistor|
|UN9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
|UN9116 Silicon PNP Epitaxial Planer Transistor|
|UN9116J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
|UN9117 Silicon PNP Epitaxial Planer Transistor|
|UN9117J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
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|UN9118J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
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|UN9119J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
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