|Category||Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)|
|Title||RETs (Resistor Equipped transistors)|
|Description||Marking = ;; V<SUB>CEO</SUB>(V) = 20 ;; I<SUB>C</SUB>(A) = 0.7 ;; P<SUB>T</SUB>(W) = 1 ;; R<SUB>1</SUB>(kW ) = 1 ;; R<SUB>2</SUB>(kW ) = 0.021 ;; Package = MT-2-A1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download UN8231 datasheet
High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the equipment and reduction of the number of parts. Available in a type with radial taping.Parameter Collector to base voltage UNR8231A UNR8231 Symbol VCBO VCEO ICP IC PT* Tj Tstg
Collector to emitter voltage UNR8231A Peak collector current Collector current Total power dissipation Junction temperature Storage temperature
* Printed circuit board: Copper foil area 1cm2 or more and thickness of 1.7mm for the collector portion.
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to base voltage UNR8231 UNR8231A
Symbol ICBO ICEO IEBO VCBO VCEO hFE* VCE(sat)* R1/R2 fT VCB = 200MHz Conditions VCB = 0 VCE = 0 VEB = 0 VCE = 5mA MHz *Pulse measurement V k min typ max 10 0.5 Unit mA V
Forward current transfer ratio Collector to emitter saturation voltage Input resistance Resistance ratio Transition frequencyNote) The Part numbers in the Parenthesis show conventional part number.
Copper foil area 1cm2 or more and thickness of 1.7mm for the collector portion.
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|UN8231A Marking = ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MT-2-A1|
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|UN9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
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|UN9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
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|UN9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
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|UN9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
|UN9114 Silicon PNP Epitaxial Planer Transistor|
|UN9114J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
|UN9115 Silicon PNP Epitaxial Planer Transistor|
|UN9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
|UN9116 Silicon PNP Epitaxial Planer Transistor|
|UN9116J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
|UN9117 Silicon PNP Epitaxial Planer Transistor|
|UN9117J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
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|UN9118J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
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|UN9119J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1|
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