Details, datasheet, quote on part number: UN911D
PartUN911D
CategoryDiscrete => Transistors => Bipolar => General Purpose => PNP
DescriptionSilicon PNP Epitaxial Planer Transistor
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN911D datasheet
Cross ref.Similar parts: DDTA144VE
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Features, Applications

Features

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-Mini type package, allowing automatic insertion through tape packing and magazine packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

1 : Base 2 : Emitter 3 : Collector SSMini Flat Type Pakage (J type)
1 : Base 2 : Emitter 3 : Collector SSMini Type Pakage Unit: mm

Parameter Collector cutoff current UN9111 UN9112/9114/911E/911D Emitter cutoff current UN9119 UN9118/911L/911CJ Collector to base voltage Collector to emitter voltage UN9111 Forward current transfer ratio UN911F/911D/9119/911H UN9118/911L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN911E UNR911AJ Transition frequency UN9112/9117 UN9113/9110/911D/911E Input resistance UN911H UNR911AJ/911BJ

Symbol ICBO ICEO Conditions VCB = 0 VCE = 0 min typ max IEBO VEB 6V, IC VCBO VCEO 2mA, IB hFE VCE = 5mA VCE(sat) VOH 0.3mA VCC = 1k VCC = 1k VCC = 1k VOL VCC = 1k VCC = 1k VCC 1k fT VCB R1 k MHz V mA Unit A

Parameter UN9114 UN9118/9119 Resistance ratio UN911H UNR911AJ Resistance between Emitter to Base R2 R1/R2 Symbol


 

Related products with the same datasheet
UN9111
UN9112
UN9113
UN9114
UN9115
UN9116
UN9117
UN9118
UN9119
UN911E
UN911F
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN911DJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN911E Silicon PNP Epitaxial Planer Transistor
UN911EJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN911F Silicon PNP Epitaxial Planer Transistor
UN911FJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN911H Silicon PNP Epitaxial Planer Transistor
UN911HJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN911L Silicon PNP Epitaxial Planer Transistor
UN911LJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UN9210 Silicon NPN Epitaxial Planer Transistor
UN9210J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9211 Silicon NPN Epitaxial Planer Transistor
UN9211J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9212 Silicon NPN Epitaxial Planer Transistor
UN9212J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9213 Silicon NPN Epitaxial Planer Transistor
UN9213J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9214 Silicon NPN Epitaxial Planer Transistor
UN9214J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9215 Silicon NPN Epitaxial Planer Transistor
UN9215J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1

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