Details, datasheet, quote on part number: UN9212J
PartUN9212J
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 8L ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = SSMini3-F1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN9212J datasheet
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Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-mini type package, allowing automatic insertion through tape packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating + 125 Unit mW C

Note) The part number in the parenthesis shows conventional part number.

Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR9219J UNR9218J/921LJ/921CJ/921VJ Collector to base voltage Collector to emitter voltage Forward UNR9211J current UNR9212J/921EJ transfer UNR9213J/9214J/921AJ/ ratio UNR921NJ/921TJ UNR921VJ Collector to emitter saturation voltage High-level output voltage Low-level output voltage UNR921EJ UNR921AJ Transition frequency Input resistance fT R1 VCE(sat) VOH VOL = 10 mA, 0.3 mA VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCB = -2 mA, = 200 MHz 4.9 0.2 VCBO VCEO hFE = 10 A, = 2 mA, = 0 VCE V 460 IEBO Conditions VCB = 0 VCE = 0 VEB = 0 Min Typ Max V mA Unit A

Parameter Resistance ratio UNR921TJ UNR921AJ/921VJ Resistance between emitter to base R2 -30% Symbol R1/R2 Conditions Min Typ k Max Unit



 

Related products with the same datasheet
UN9211J
UN9213J
UN9214J
UN9215J
UN9216J
UN9217J
UN9218J
UN9219J
UN921DJ
UN921EJ
UN921KJ
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN9213 Silicon NPN Epitaxial Planer Transistor
UN9213J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9214 Silicon NPN Epitaxial Planer Transistor
UN9214J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9215 Silicon NPN Epitaxial Planer Transistor
UN9215J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9216 Silicon NPN Epitaxial Planer Transistor
UN9216J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9217 Silicon NPN Epitaxial Planer Transistor
UN9217J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9218 Silicon NPN Epitaxial Planer Transistor
UN9218J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9219 Silicon NPN Epitaxial Planer Transistor
UN9219J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN921AJ Silicon NPN Epitaxial Planer Transistor: 50v, 100ma
UN921BJ
UN921CJ
UN921D Silicon NPN Epitaxial Planer Transistor
UN921DJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN921E Silicon NPN Epitaxial Planer Transistor
UN921EJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1

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