Details, datasheet, quote on part number: UN9214J
PartUN9214J
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 8L ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = SSMini3-F1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN9214J datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-mini type package, allowing automatic insertion through tape packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating + 125 Unit mW C

Note) The part number in the parenthesis shows conventional part number.

Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR9219J UNR9218J/921LJ/921CJ/921VJ Collector to base voltage Collector to emitter voltage Forward UNR9211J current UNR9212J/921EJ transfer UNR9213J/9214J/921AJ/ ratio UNR921NJ/921TJ UNR921VJ Collector to emitter saturation voltage High-level output voltage Low-level output voltage UNR921EJ UNR921AJ Transition frequency Input resistance fT R1 VCE(sat) VOH VOL = 10 mA, 0.3 mA VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCB = -2 mA, = 200 MHz 4.9 0.2 VCBO VCEO hFE = 10 A, = 2 mA, = 0 VCE V 460 IEBO Conditions VCB = 0 VCE = 0 VEB = 0 Min Typ Max V mA Unit A

Parameter Resistance ratio UNR921TJ UNR921AJ/921VJ Resistance between emitter to base R2 -30% Symbol R1/R2 Conditions Min Typ k Max Unit



 

Related products with the same datasheet
UN9211J
UN9212J
UN9213J
UN9215J
UN9216J
UN9217J
UN9218J
UN9219J
UN921DJ
UN921EJ
UN921KJ
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UN9215 Silicon NPN Epitaxial Planer Transistor
UN9215J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9216 Silicon NPN Epitaxial Planer Transistor
UN9216J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9217 Silicon NPN Epitaxial Planer Transistor
UN9217J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9218 Silicon NPN Epitaxial Planer Transistor
UN9218J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN9219 Silicon NPN Epitaxial Planer Transistor
UN9219J Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN921AJ Silicon NPN Epitaxial Planer Transistor: 50v, 100ma
UN921BJ
UN921CJ
UN921D Silicon NPN Epitaxial Planer Transistor
UN921DJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN921E Silicon NPN Epitaxial Planer Transistor
UN921EJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN921F Silicon NPN Epitaxial Planer Transistor
UN921KJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN921L Silicon NPN Epitaxial Planer Transistor
UN921LJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1

MN6160P : CMOS LSI Synchronizing Signal Generators for Color Video Cameras

EEFUE0D271R : Specialty Polymer Aluminum Electrolytic Capacitor

ERJ-T08J391V : Thick Film Resistors - SMD 1206 390ohms 5% Tol Panasonic offers ERJ Anti-Pulse Thick Film Chip Resistors with high reliability and high power (0.25 W to 0.5 W). High pulse characteristics feature optimized trimming specifications. Panasonic ERJ Anti-Pulse Thick Film Chip Resistors are available in three case sizes: 0805, 1206, and 1210. Specifi

LN452YP : LEDs -; LED AMBER DIFFUSED 4MM SQUARE Specifications: Color: Amber ; Lens Style/Size: Square with Flat Top, 4mm ; Millicandela Rating: 3mcd ; Voltage - Forward (Vf) Typ: 2.2V ; Wavelength - Dominant: - ; Wavelength - Peak: 590nm ; Current - Test: 20mA ; Viewing Angle: - ; Lens Type: Diffused, Tinted ; Luminous Flux @ Current - Test: - ;

ERJ-1GNF1071C : 1.07K Ohm 0.05W, 1/20W Chip Resistor - Surface Mount; RES 1.07K OHM 1/20W 1% 0201 SMD Specifications: Resistance (Ohms): 1.07K ; Power (Watts): 0.05W, 1/20W ; Tolerance: 1% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: 200ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERJ-S12F2611U : 2.61K Ohm 0.75W, 3/4W Chip Resistor - Surface Mount; RES ANTI-SULFUR 2.61KOHM 1% 1812 Specifications: Resistance (Ohms): 2.61K ; Power (Watts): 0.75W, 3/4W ; Tolerance: 1% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: 100ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

EXB-28V362JX : Resistor 3.6K Ohm 31mW 4 Resistors[number of pins] Pin Networks, Arrays; RES ARRAY 3.6K OHM 4 RES 0804 Specifications: Resistance (Ohms): 3.6K ; Tolerance: 5% ; Power Per Element: 31mW ; Circuit Type: Isolated ; Number of Pins: 8 ; Packaging: Digi-Reel ; Number of Resistors: 4 ; Package / Case: 0804 (2010 Metric), Convex ; Mounting Type: Surface Mount ; Temperature Coefficient: 200ppm/C ; Lead Fr

ERJ-6ENF4223V : 422K Ohm 0.125W, 1/8W Chip Resistor - Surface Mount; RES 422K OHM 1/8W 1% 0805 SMD Specifications: Resistance (Ohms): 422K ; Power (Watts): 0.125W, 1/8W ; Tolerance: 1% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: 100ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

DMA261090R : Transistor (bjt) - Arrays, Pre-biased Discrete Semiconductor Product 100mA 50V 300mW 2 PNP - Pre-Biased (Dual); TRANS ARRAY PNP/PNP W/RES MINI5 Specifications: Transistor Type: 2 PNP - Pre-Biased (Dual) ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 300mW ; Resistor - Base (R1) (Ohms): 1K ; Resistor - Emitter Base (R2) (Ohms): 10K ; Vce Saturation (Max) @ Ib, Ic: 250mV @ 500A, 10mA

 
0-C     D-L     M-R     S-Z