Details, datasheet, quote on part number: UN921EJ
PartUN921EJ
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 8L ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = SSMini3-F1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UN921EJ datasheet
Cross ref.Similar parts: UNR921EJ
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Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-mini type package, allowing automatic insertion through tape packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating + 125 Unit mW C

Note) The part number in the parenthesis shows conventional part number.

Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR9219J UNR9218J/921LJ/921CJ/921VJ Collector to base voltage Collector to emitter voltage Forward UNR9211J current UNR9212J/921EJ transfer UNR9213J/9214J/921AJ/ ratio UNR921NJ/921TJ UNR921VJ Collector to emitter saturation voltage High-level output voltage Low-level output voltage UNR921EJ UNR921AJ Transition frequency Input resistance fT R1 VCE(sat) VOH VOL = 10 mA, 0.3 mA VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCB = -2 mA, = 200 MHz 4.9 0.2 VCBO VCEO hFE = 10 A, = 2 mA, = 0 VCE V 460 IEBO Conditions VCB = 0 VCE = 0 VEB = 0 Min Typ Max V mA Unit A

Parameter Resistance ratio UNR921TJ UNR921AJ/921VJ Resistance between emitter to base R2 -30% Symbol R1/R2 Conditions Min Typ k Max Unit



 

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UN921F Silicon NPN Epitaxial Planer Transistor
UN921KJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN921L Silicon NPN Epitaxial Planer Transistor
UN921LJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UN921N Silicon NPN Epitaxial Planer Transistor: 50v, 100ma
UN921TJ Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSMini3-F1
UNA0206 VCEO(V) = 18 ;; IC(A) = 1 ;; PT(W) = 0.5 ;; Package = SO10-G1
UNA0206UN206
UNA0216 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO14-G1
UNA0216UN216
UNA0217 VCEO(V) = -10/10 ;; IC(A) = -1/1 ;; PT(W) = 0.5 ;; Package = SO10-G1
UNA0217UN217
UNA0222 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO14-G1
UNA0222UN222
UNA0225 VCEO(V) = -10/10 ;; IC(A) = -0.5/0.5 ;; PT(W) = 0.5 ;; Package = SO16-G1
UNA0225UN225
UNA0227 VCEO(V) = -10/10 ;; IC(A) = -1.5/1.5 ;; PT(W) = 0.5 ;; Package = SO16-G1
UNA0227UN227
UNA0228 VCEO(V) = -10/10 ;; IC(A) = -1/1 ;; PT(W) = 0.5 ;; Package = SO10-G1
UNA0228UN228
UNA0230 VCEO(V) = -10/10 ;; IC(A) = -3/3 ;; PT(W) = 0.5 ;; Package = SO10-G1

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