Details, datasheet, quote on part number: UNR211L
PartUNR211L
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 6L ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.2 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = Mini3-G1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR211L datasheet
Cross ref.Similar parts: DDTA143ECA, BCR162, RN2401, UN211L
Quote
Find where to buy
 
  

 

Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating to +150 Unit mW C

Note) The part numbers in the parenthesis show conventional part number.

Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR2118/211L/211V UNR211Z Collector to base voltage Collector to emitter voltage Forward current transfer ratio UNR211V UNR211Z Collector to emitter saturation voltage UNR211V Output voltage high level Output voltage low level UNR211D UNR211E Transition frequency Input resistance UNR2112/2117/211T UNR2110/2113/211D/211E Note) hFE rank classification (UNR2110/2115/2116/2117) Rank hFE fT R1 VOH VOL VCE(sat) = -10 mA, = -10 mA, -1.5 mA VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCB = 1 mA, = 200 MHz - 0.2 VCBO VCEO hFE = -10 A, = -2 mA, = 0 VCE V 460 IEBO Conditions VCB = 0 VCE = 0 VEB = 0 Min Typ Max V mA Unit A

Parameter Resistance ratio UNR211Z 0.17 Symbol R1/R2 Conditions Min 0.17 0.08 Typ Max 0.25 0.12 Unit



 

Related products with the same datasheet
UN2111
UN2112
UN2113
UN2114
UN2115
UN2116
UN2117
UN2118
UN2119
UN211D
UN211E
UN211F
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR211LUN211L Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1
UNR211W Marking = 7F ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = ;; R2(kW ) = 100 ;; Package = Mini3-G1
UNR211Z Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1
UNR2121 Marking = 7A ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.2 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = Mini3-G1
UNR2154 Marking = ev ;; VCEO(V) = -30 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = Mini3-G1
UNR2210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1
UNR221W Marking = 9F ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = ;; R2(kW ) = 100 ;; Package = Mini3-G1
UNR221Z Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1
UNR2221 Marking = 9A ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.2 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = Mini3-G1
UNR2225 Marking = FZ ;; VCEO(V) = 20 ;; IC(A) = 0.6 ;; PT(W) = 0.2 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = Mini3-G1
UNR3113
UNR31A0 Marking = CD ;; VCEO(V) = -50 ;; IC(A) = -0.8 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31A1 Marking = ce ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31A2 Marking = CF ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31A3 Marking = CH ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31A4 Marking = CK ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR31A5 Marking = CL ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31A6 Marking = CN ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31AE Marking = DL ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31AM Marking = ef ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 2.2 ;; R2(kW ) = 10 ;; Package = SSSMini3-F1
UNR31AN Marking = ek ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1

MA3X704D : VRM(V) = 30 ;; IF(mA) = 30 ;; VFmax.(V) = 0.4 ;; IR(µA) = 1 ;; Package = Mini3-G1

UNR2116 : RETs (Resistor Equipped transistors) Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1

HC4D-H-AC48V : MINIATURE RELAY FOR WIDER APPLICATIONS MINIATURE RELAY FOR WIDER APPLICATIONS ,TYPICAL APPLICATIONS Suitable for factory automation equipment and automotive devices 1. Control panels, power supply equipment, molding equipment, machine tools, welding equipment, agricultural equipment

EEE-1EA101XAP : 100F Aluminum Capacitor Radial, Can - SMD 25V; CAP ALUM 100UF 25V 20% SMD Specifications: Capacitance: 100F ; ESR (Equivalent Series Resistance): - ; Features: General Purpose ; Lifetime @ Temp.: 2000 Hrs @ 85C ; Size / Dimension: 0.315" Dia (8.00mm) ; Lead Spacing: - ; Surface Mount Land Size: 0.327" L x 0.327" W (8.30mm x 8.30mm) ; Mounting Type: Surface Mount ; Packa

LN89RPP : LEDs -; LED ORANGE DIFFUSED ROUND Specifications: Color: Orange ; Lens Style/Size: Round with Domed Top, 4mm ; Millicandela Rating: 10mcd ; Voltage - Forward (Vf) Typ: 2.1V ; Wavelength - Dominant: - ; Wavelength - Peak: 630nm ; Current - Test: 20mA ; Viewing Angle: - ; Lens Type: Diffused, Tinted ; Luminous Flux @ Current - Test: -

ERJ-1TNF1002U : 10K Ohm 1W Chip Resistor - Surface Mount; RES 10.0K OHM 1W 1% 2512 SMD Specifications: Resistance (Ohms): 10K ; Power (Watts): 1W ; Tolerance: 1% ; Packaging: Digi-Reel ; Composition: Thick Film ; Temperature Coefficient: 100ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERJ-S03J621V : 620 Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES ANTI-SULFUR 620 OHM 5% 0603 Specifications: Resistance (Ohms): 620 ; Power (Watts): 0.1W, 1/10W ; Tolerance: 5% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: 100ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERJ-1TNF2870U : 287 Ohm 1W Chip Resistor - Surface Mount; RES 287 OHM 1W 1% 2512 SMD Specifications: Resistance (Ohms): 287 ; Power (Watts): 1W ; Tolerance: 1% ; Packaging: Digi-Reel ; Composition: Thick Film ; Temperature Coefficient: 100ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERJ-6RQJ4R7V : 4.7 Ohm 0.125W, 1/8W Chip Resistor - Surface Mount; RES 4.7 OHM 1/8W 5% 0805 SMD Specifications: Resistance (Ohms): 4.7 ; Power (Watts): 0.125W, 1/8W ; Tolerance: 5% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: 200ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERJ-XGNJ681Y : 680 Ohm 0.03W, 1/32W Chip Resistor - Surface Mount; RESISTOR 680 OHM 1/32W 5% 01005 Specifications: Resistance (Ohms): 680 ; Power (Watts): 0.03W, 1/32W ; Tolerance: 5% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: 200ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

2SD22400SL : Transistor (bjt) - Single Discrete Semiconductor Product 50mA 150V 125mW NPN; TRANS NPN 150VCEO 50MA SSMINI 3P Specifications: Transistor Type: NPN ; Voltage - Collector Emitter Breakdown (Max): 150V ; Current - Collector (Ic) (Max): 50mA ; Power - Max: 125mW ; DC Current Gain (hFE) (Min) @ Ic, Vce: 185 @ 10mA, 5V ; Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA ; Frequency - Transition: 150MHz ; Current - Co

UNR31A600L : Transistor (bjt) - Single, Pre-biased Discrete Semiconductor Product 80mA 50V 100mW PNP - Pre-Biased; TRANS PNP W/RES 160HFE SSSMINI3P Specifications: Transistor Type: PNP - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 80mA ; Power - Max: 100mW ; Resistor - Base (R1) (Ohms): 4.7K ; Resistor - Emitter Base (R2) (Ohms): - ; Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA ; Current

 
0-C     D-L     M-R     S-Z