|Category||Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)|
|Title||RETs (Resistor Equipped transistors)|
|Description||Marking = 7F ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.2 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(kW ) = 100 ;; Package = Mini3-G1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download UNR211W datasheet
REB 100 k, without RB , built-in high-resistor between emitter and base. Mini-type package, allowing downsizing of the equipment. Allowing automatic insertion through tape packing.
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating to +150 Unit mW °C1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Type Package
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Input resistance Transition frequency IEBO VCBO VCEO hFE VCE(sat) R2 fT VCB = 2 mA, = 200 MHz Conditions VCB = 0 VCE = 0 VEB = -10 µA, = -2 mA, = 0 VCE = -10 mA, V k MHz Min Typ Max Unit µA V
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|UNR211Z Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1|
|UNR2121 Marking = 7A ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.2 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = Mini3-G1|
|UNR2154 Marking = ev ;; VCEO(V) = -30 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = Mini3-G1|
|UNR2210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1|
|UNR221W Marking = 9F ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = ;; R2(kW ) = 100 ;; Package = Mini3-G1|
|UNR221Z Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1|
|UNR2221 Marking = 9A ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.2 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = Mini3-G1|
|UNR2225 Marking = FZ ;; VCEO(V) = 20 ;; IC(A) = 0.6 ;; PT(W) = 0.2 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = Mini3-G1|
|UNR31A0 Marking = CD ;; VCEO(V) = -50 ;; IC(A) = -0.8 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31A1 Marking = ce ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31A2 Marking = CF ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31A3 Marking = CH ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31A4 Marking = CK ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR31A5 Marking = CL ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31A6 Marking = CN ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31AE Marking = DL ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31AM Marking = ef ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 2.2 ;; R2(kW ) = 10 ;; Package = SSSMini3-F1|
|UNR31AN Marking = ek ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR31AT Marking = en ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1|
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SD250-1L : PULSE TRANSFORMER FOR BASE/GATE DRIVE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.
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