|Category||Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)|
|Title||RETs (Resistor Equipped transistors)|
|Description||Marking = 7F ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.2 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(kW ) = 100 ;; Package = Mini3-G1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download UNR211W datasheet
REB 100 k, without RB , built-in high-resistor between emitter and base. Mini-type package, allowing downsizing of the equipment. Allowing automatic insertion through tape packing.
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating to +150 Unit mW °C1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Type Package
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Input resistance Transition frequency IEBO VCBO VCEO hFE VCE(sat) R2 fT VCB = 2 mA, = 200 MHz Conditions VCB = 0 VCE = 0 VEB = -10 µA, = -2 mA, = 0 VCE = -10 mA, V k MHz Min Typ Max Unit µA V
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.Please read the following notes before using the datasheets
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|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|UNR211Z Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1|
|UNR2121 Marking = 7A ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.2 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = Mini3-G1|
|UNR2154 Marking = ev ;; VCEO(V) = -30 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = Mini3-G1|
|UNR2210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1|
|UNR221W Marking = 9F ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.2 ;; R1(kW ) = ;; R2(kW ) = 100 ;; Package = Mini3-G1|
|UNR221Z Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.2 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = Mini3-G1|
|UNR2221 Marking = 9A ;; VCEO(V) = 50 ;; IC(A) = 0.5 ;; PT(W) = 0.2 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = Mini3-G1|
|UNR2225 Marking = FZ ;; VCEO(V) = 20 ;; IC(A) = 0.6 ;; PT(W) = 0.2 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = Mini3-G1|
|UNR31A0 Marking = CD ;; VCEO(V) = -50 ;; IC(A) = -0.8 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31A1 Marking = ce ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31A2 Marking = CF ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31A3 Marking = CH ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31A4 Marking = CK ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR31A5 Marking = CL ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31A6 Marking = CN ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31AE Marking = DL ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31AM Marking = ef ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 2.2 ;; R2(kW ) = 10 ;; Package = SSSMini3-F1|
|UNR31AN Marking = ek ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR31AT Marking = en ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1|
2SC5896 : Television/Display. VCBO(V) = 60 ;; IC(A) = 3 ;; HFE(min) = 80 ;; HFE(max) = 250 ;; Package = TO-220D-A1.
2SK2422 : Silicon N-channel MOSFET. Application Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Item Drain to source voltage 2SK1637 2SK2422 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note.
CL-1CL3 : Infrared Emitting Diodes ( Gaalas ). The is a high-power GaAlAs IRED mounted a 3©TM ceramic package. The output power is so high compared to GaAs IREDs. ¶UCompact (©TM 3mm) ¶UWide beam angle ¶U Low-cost APPLICATIONS ¶UFloppy disk drives ¶UOptical switches ¶UOptical readers Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering.
SR1620CS : Schottky Barrier Rectifier ( Voltage Range 20 to 60 Volts Current 16 Amperes ).
UFS540 : Ultra Fast Recovery Rectifiers.
BDS28A-N2 : POWER TRANSISTOR, TO-276AB. s: Package Type: HERMETIC SEALED, CERAMIC, SMD1, 3 PIN.
BSR10CN103J : RES,RADIAL,WIREWOUND,10K OHMS,700WV,5% +/-TOL,-300,300PPM TC,6347 CASE. s: Category / Application: General Use ; Technology / Construction: Wirewound.
JANS2N2432 : 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18. s: Polarity: NPN ; Package Type: TO-18, 3 PIN.
M85T47SSAXT : 1 ELEMENT, 0.565 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Air ; Lead Style: Axial, PRINTED WIRING PIN ; Application: General Purpose, RF Choke ; Inductance Range: 0.5650 microH ; Rated DC Current: 100 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F).
RS062R : RESISTOR, NETWORK, FILM, ISOLATED, SURFACE MOUNT, 0302. s: Configuration: Chip Array ; Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Operating DC Voltage: 12.5 volts.
SD250-1L : PULSE TRANSFORMER FOR BASE/GATE DRIVE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.
TSA1036CXRF : 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: ROHS COMPLIANT PACKAGE-3.
106MABA02KJC : CAPACITOR, METALLIZED FILM, 575 V, 10 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; RoHS Compliant: Yes ; Capacitance Range: 10 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 575 volts ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -25 to 85 C (-13 to 185 F).
2SK2181-4000 : 3 A, 500 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 2.3 ohms ; Package Type: TO-220, STO-220, 3 PIN ; Number of units in IC: 1.
2SK3299B-S19-AY : 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.7500 ohms ; PD: 1500 milliwatts ; Package Type: LEAD FREE, MP-25, 3 PIN ; Number of units in IC: 1.