|
Details, datasheet, quote on part number:UNR221KUN221K
| |
| Part: | UNR221KUN221K |
| Category: | Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors) |
| Description: | Marking = 8P ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.1 ;; P<SUB>T</SUB>(W) = 0.2 ;; R<SUB>1</SUB>(kW ) = 10 ;; R<SUB>2</SUB>(kW ) = 4.7 ;; Package = Mini3-G1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UNR221KUN221K datasheet File size : 287 kB |
| Request For quote: | Find where to buy UNR221KUN221K
|
| |
Datasheet text preview:
Transistors with built-in Resistor
UNR22XX Series (UN22XX Series)
Silicon NPN epitaxial planer transistor
Unit: mm
For digital circuits s Features
· Costs can be reduced through downsizing of the equipment and reduction of the number of parts. · Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
1
0 10 0.40+0..05
0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
2 (0.65)
(0.95) (0.95) 1.9±0.1
0 20 2.90+0..05
s Resistance by Part Number
· UNR2210 · UNR2211 · UNR2212 · UNR2213 · UNR2214 · UNR2215 · UNR2216 · UNR2217 · UNR2218 · UNR2219 · UNR221D · UNR221E · UNR221F · UNR221K · UNR221L · UNR221M · UNR221N · UNR221T · UNR221V · UNR221Z Marking Symbol (R1) (UN2210) 8L 47 k (UN2211) 8A 10 k (UN2212) 8B 22 k (UN2213) 8C 47 k (UN2214) 8D 10 k (UN2215) 8E 10 k (UN2216) 8F 4.7 k (UN2117) 8H 22 k (UN2218) 8I 0.51 k (UN2219) 8K 1 k (UN221D) 8M 47 k (UN221E) 8N 47 k (UN221F) 8O 4.7 k (UN221K) 8P 10 k (UN221L) 8Q 4.7 k (UN221M) EL 2.2 k (UN221N) EX 4.7 k (UN221T) EZ 22 k (UN221V) FD 2.2 k (UN221Z) FF 4.7 k (R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 10 k 22 k 10 k 4.7 k 4.7 k 47 k 47 k 47 k 2.2 k 22 k
10°
02 1.1+0..1 03 1.1+0..1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Internal Connection
R1 B R2 E
0 to 0.1
C
s Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj T stg Rating 50 50 100 200 150 -55 to +150 Unit V V mA mW °C °C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2002 SJH00010BED
0.4±0.2
5°
1
UNR22XX Series
s Electrical Characteristics Ta = 25°C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR2211 UNR2212/2214/221D/ 221E/221M/221N/221T UNR2213 UNR2210/2215/2216/2217 UNR221F/221K UNR2219 UNR2218/221L/221V UNR221Z Collector to base voltage Collector to emitter voltage Forward current transfer ratio UNR2211 UNR2212/221E UNR2213/2214/221M UNR2210*/2215*/2216*/2217* UNR2218/221K/221L UNR2219/221D/221F UNR221N/221T UNR221V UNR221Z Collector to emitter saturation voltage UNR221V Output voltage high level Output voltage low level UNR2213/221K UNR221D UNR221E Transition frequency Input resistance UNR2218 UNR2219 UNR221M/221V UNR2216/221F/221L/221N UNR221Z UNR2211/2214/2215/221K UNR2212/2217/221T UNR2210/2213/221D/221E Note) *: hFE rank classification (UNR2210/2215/2216/2217) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 fT R1 V OH VOL VCE(sat) IC = 10 mA, IB = 0.3 mA IC = 10 mA, IB = 1.5 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k VCC = 5 V, VB = 10 V, RL = 1 k VCC = 5 V, VB = 6 V, RL = 1 k VCB = 10 V, IE = -2 mA, f = 200 MHz -3 0 % 150 0.51 1 2.2 4.7 10 22 47 + 30% MHz k 4.9 0.2 0.04 VCBO V CEO hFE IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCE = 10 V, IC = 5 mA 50 50 35 60 80 160 20 30 80 6 60 400 20 200 0.25 0.25 V V V 460 IEBO Conditions VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min Typ Max 0.1 0.5 0.5 0.2 0.1 0.01 1.0 1.5 2.0 0.4 V V mA Unit µA
2
SJH00010BED
UNR22XX Series
s Electrical Characteristics (continued) Ta = 25°C
Parameter Resistance ratio UNR2211/2212/2213/221L UNR2214 UNR2218/2219 UNR221D UNR221E UNR221F/221T UNR221K UNR221M UNR221N UNR221V UNR221Z Symbol R1/ R 2 Conditions Min 0.8 0.17 0.08 Typ 1.0 0.21 0.1 4.7 2.14 0.47 2.13 0.047 0.1 1.0 0.21 Max 1.2 0.25 0.12 Unit
Common characteristics chart PT T a
250
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Characteristics charts of UNR2210 IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
60 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25°C
VCE(sat) IC
100 30 10 3 1 Ta = 75°C 0.3 0.1 0.03 0.01 0.1 -25°C 25°C IC / IB = 10
400 350
hFE IC
VCE = 10 V
Forward current transfer ratio hFE
50
Collector current IC (mA)
300 Ta = 75°C 250 25°C 200 150 100 50 0 1 3 10 30 100 300 1 000 -25°C
40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA
30
0.3 mA
20
10
0 0 2 4 6 8 10 12
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00010BED
3
|
|
