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Details, datasheet, quote on part number:UNR221W
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| Part: | UNR221W |
| Category: | Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors) |
| Description: | Marking = 9F ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.2 ;; R<SUB>1</SUB>(kW ) = ;; R<SUB>2</SUB>(kW ) = 100 ;; Package = Mini3-G1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UNR221W datasheet File size : 55 kB |
| Request For quote: | Find where to buy UNR221W
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Datasheet text preview:
Transistors with built-in Resistor
UNR221W
Silicon NPN epitaxial planer type
Unit: mm
For digital circuit I Features
· REB = 100 k, without RB , built-in high-resistor between emitter and base. · Mini-type package, allowing downsizing of the equipment. · Allowing automatic insertion through tape packing.
1
0 10 0.40+0..05
0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
2
(0.65)
(0.95) (0.95) 1.9±0.1
0 20 2.90+0..05
I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 200 150 -55 to +150 Unit V V mA mW °C °C
10°
02 1.1+0..1 03 1.1+0..1
0 to 0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Type Package
Marking Symbol: 9F Internal Connection
C
B R2 (100 k)
E
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Input resistance Transition frequency IEBO VCBO V CEO h FE VCE(sat) R2 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA -3 0 % 100 100 50 50 80 0.25 + 30% V k MHz Min Typ Max 0.1 0.5 100 Unit µA µA µA V V
0.4±0.2
5°
1
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