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Details, datasheet, quote on part number:UNR2224UN2224
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| Part: | UNR2224UN2224 |
| Category: | Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors) |
| Description: | Marking = 9D ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.5 ;; P<SUB>T</SUB>(W) = 0.2 ;; R<SUB>1</SUB>(kW ) = 2.2 ;; R<SUB>2</SUB>(kW ) = 10 ;; Package = Mini3-G1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UNR2224UN2224 datasheet File size : 97 kB |
| Request For quote: | Find where to buy UNR2224UN2224
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Datasheet text preview:
Transistors with built-in Resistor
UNR2221/2222/2223/2224
(UN2221/2222/2223/2224)
Silicon NPN epitaxial planer transistor
Unit : mm
For digital circuits s Features
· Costs can be reduced through downsizing of the equipment and reduction of the number of parts. · Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
1
0 10 0.40+0..05
0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
2 (0.65)
(0.95) (0.95) 1.9±0.1
0 20 2.90+0..05
s Resistance by Part Number
· UNR2221 · UNR2222 · UNR2223 · UNR2224 Marking Symbol (R1) (UN2221) 9A 2.2 k (UN2222) 9B 4.7 k (UN2223) 9C 10 k (UN2224) 9D 2.2 k (R2) 2.2 k 4.7 k 10 k 10 k
10°
02 1.1+0..1 03 1.1+0..1
s Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 500 200 150 -55 to +150 Unit V V mA mW °C °C B R2
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Internal Connection
R1 C
0 to 0.1
E
s Electrical Characteristics Ta = 25°C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR2221 UNR2222 UNR2223/2224 VCBO V CEO hFE IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCE = 10 V, IC = 100 mA 50 50 40 50 60 VCE(sat) V OH VOL IC = 100 mA, IB = 5 mA VCC = 5 V, VB = 0.5 V, RL = 500 VCC = 5 V, VB = 3.5 V, RL = 500 4.9 0.2 0.25 V V V IEBO Conditions VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min Typ Max 1 1 5 2 1 V V mA Unit µA
Collector to base voltage Collector to emitter voltage Forward current UNR2221 UNR2222
transfer ratio UNR2223/2224 Collector to emitter saturation voltage Output voltage high level Output voltage low level
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2002 SJH00012BED
0.4±0.2
5°
1
UNR2221/2222/2223/2224
s Electrical Characteristics (continued) Ta = 25°C
Parameter Transition frequency Input resistance UNR2221/2224 UNR2222 UNR2223 R1 / R 2 0.8 Symbol fT R1 Conditions VCB = 10 V, IE = -50 mA, f = 200 MHz -3 0 % Min Typ 200 2.2 4.7 10 1.0 0.22 1.2 + 30% Max Unit MHz k
Resistance ratio UNR2224
Common characteristics chart PT T a
250
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Characteristics charts of UNR2221 IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
300 IB = 1.0 mA 250 Ta = 25°C
100 30 10 3 1 Ta = 75°C 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1 000 -25°C
0 1 3 10 30 100 300 1 000
VCE(sat) IC
IC / IB = 10
400
hFE IC
VCE = 10 V
Collector current IC (mA)
0.9 mA 200 0.8 mA 0.7mA 150 0.6 mA 0.5 mA 100 0.4 mA 0.3mA 50 0.2mA 0 0 2 4 6 8 0.1mA 10 12
Forward current transfer ratio hFE
300
Ta = 75°C
200
25°C
25°C 100
-25°C
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJH00012BED
UNR2221/2222/2223/2224
Cob VCB
24
I O VI N
f = 1 MHz IE = 0 Ta = 25°C
10 000 3 000 VO = 5 V Ta = 25°C
VIN IO
100 30 VO = 0.2 V Ta = 25°C
Collector output capacitance Cob (pF)
20
16
Output current IO (µA)
Input voltage VIN (V)
1 000 300 100 30 10 3
10 3 1 0.3 0.1 0.03 0.01 0.1
15
8
4
0 0.1
0.3
1
3
10
30
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2222 IC VCE
300
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta = 25°C
100 30 IC / IB = 10 200 VCE = 10 V
hFE IC
Collector current IC (mA)
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA
Forward current transfer ratio hFE
250
Ta = 75°C 150 25°C
10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1 000 -25°C Ta = 75°C 25°C
200
150
100
-25°C
100
0.4 mA 0.3 mA
50
50
0.2 mA 0.1 mA
0 0 2 4 6 8 10 12
0 1 3 10 30 100 300 1 000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
12
I O VI N
f = 1 MHz IE = 0 Ta = 25°C
VIN IO
VO = 5 V Ta = 25°C
100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VO = 0.2 V Ta = 25°C
10 000 3 000
Collector output capacitance Cob (pF)
10
Output current IO (µA)
8
300 100 30 10 3
6
4
2
0 0.1
0.3
1
3
10
30
100
1 0.4
Input voltage VIN (V)
1 000
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
SJH00012BED
3
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