|
Details, datasheet, quote on part number:UNR2225UN2225
| |
| Part: | UNR2225UN2225 |
| Category: | Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors) |
| Description: | Marking = FZ ;; V<SUB>CEO</SUB>(V) = 20 ;; I<SUB>C</SUB>(A) = 0.6 ;; P<SUB>T</SUB>(W) = 0.2 ;; R<SUB>1</SUB>(kW ) = 10 ;; R<SUB>2</SUB>(kW ) = ;; Package = Mini3-G1 |
| Company: | Panasonic Industrial Company/Electronic Components |
| Datasheet: | Download UNR2225UN2225 datasheet File size : 89 kB |
| Request For quote: | Find where to buy UNR2225UN2225
|
| |
Datasheet text preview:
Transistors with built-in Resistor
UNR2225/2226/2227 (UN2225/2226/2227)
Silicon NPN epitaxial planer transistor
Unit: mm
For muting s Features
· Low collector to emitter saturation voltage VCE(sat) , optimum for the muting circuit. VCE(sat): 30 mA(typ.) · The use with high current value is possible. IC: 600 mA
0 10 0.40+0..05
0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
1
2
(0.65)
(0.95) (0.95)
s Resistance by Part Number
· UNR2225 · UNR2226 · UNR2227 Marking symbol (R1) FZ 10 k FY 4.7 k FW 6.8 k (R2) 6.8 k
10°
1.9±0.1
0 20 2.90+0..05
02 1.1+0..1
0 to 0.1
03 1.1+0..1
s Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 5 600 200 150 -55 to +150 Unit V V V mA mW °C °C B R2
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Internal Connection
R1 C
E
s Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio UNR2227 UNR2225/2226 VCE(sat) R1 IC = 50 mA, IB = 2.5 mA -3 0 % 4.7 6.8 10 R1/ R 2 RON VI = 7 V, RL = 1 k, f = 1 kHz 0.8 1.0 0.95 1.1 1.5 fT VCB = 10 V, IE = -50 mA, f = 200 MHz 200 MHz 1.2 Symbol ICBO IEBO VCBO V CEO V EBO hFE Conditions VCB = 30 V, IE = 0 VEB = 5 V, IC = 0 IC = 1 µA, IE = 0 IC = 1 mA, IB = 0 IE = 1 µA, IC = 0 VCE = 5 V, IC = 50 mA 30 20 5 70 100 600 80 + 30% mV k Min Typ Max 1 1 Unit µA µA V V V
Collector to emitter saturation voltage Input resistance UNR2226 UNR2227 UNR2225 Resistance ratio ON-resistance
*
UNR2227 UNR2226 UNR2227 UNR2225
Transition frequency Note) *: Refer to RON measurment circuit
Publication date: January 2002
Note) The part number in the parenthesis shows conventional part number.
SJH00040BED
0.4±0.2
5°
1
UNR2225/2226/2227
s Electrical Characteristics (continued) Ta = 25°C ± 3°C
· RON measurment circuit
RL R1 VI R2 VB VV VA f = 1 kHz V = 0.3 V RON = VB × RL () VA-VB
Common characteristics chart PT T a
250
Total power dissipation PT (mW)
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
Characteristics charts of UNR2225 IC VCE
Collector to emitter saturation voltage VCE(sat) (mV)
400 Ta = 25°C
VCE(sat) IC
1 000 IC / IB = 10
250
hFE IC
VCE = 10 V
300
Forward current transfer ratio hFE
Collector current IC (A)
300
IB = 1.0 mA 0.9 mA 0.8 mA
200 Ta = 75°C 150 25°C -25°C 100
100
200
0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA
30
Ta = 75°C -25°C
10
100
25°C
50
3
0
0
2.5
5
7.5
10
1 1 3 10 30 100
0 1m
10m
100m
1
10
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (A)
2
SJH00040BED
UNR2225/2226/2227
Cob VCB
14
I O VI N
100m VO = 5 V Ta = 25°C
100
VIN IO
VO = 0.2 V Ta = 25°C
Collector output capacitance Cob (pF)
10m
30
Output current IO (A)
10
Input voltage VIN (V)
10
1m
3
100µ
5
1
10µ
300m
1 1 3 10 30 100
1µ 250m 500m
750m
1
1.25
1.5
100m 1µ
10µ
100µ
1m
10m
100m
Collector to base voltage VCB
(V)
Input voltage VIN (V)
Output current IO (A)
Characteristics charts of UNR2226 IC VCE
Collector to emitter saturation voltage VCE(sat) (mV)
400 Ta = 25°C IB = 1.0 mA 0.9 mA
VCE(sat) IC
1 000 IC / IB = 10
hFE IC
500 VCE = 10 V
300
Forward current transfer ratio hFE
400 Ta = 75°C 300 25°C 200 -25°C
Collector current IC (A)
300 0.8 mA 0.7 mA 0.6 mA 200 0.5 mA 0.4 mA 100 0.3 mA 0.2 mA 0.1 mA 0 0 2.5 5 7.5 10
100
Ta = 75°C
30 25°C 10 3 -25°C
100
1 1 3 10 30 100 300 1 000
0 1m
10m
100m
1
10
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (A)
Cob VCB
14 f = 1 MHz
I O VI N
100m VO = 5 V Ta = 25°C
100
VIN IO
VO = 0.2 V Ta = 25°C
Collector output capacitance Cob (pF)
10m
30
Output current IO (A)
10
Input voltage VIN (V)
10
1m
3
100µ
5
1
10µ
300m
1 1 3 10 30 100
1µ 250m 500m
750m
1
1.25
1.5
100m 1µ
10µ
100µ
1m
10m
100m
Collector to base voltage VCB (V)
Input voltage VIN
(V)
Output current IO (A)
SJH00040BED
3
|
|
