Details, datasheet, quote on part number: UNR31A2
PartUNR31A2
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = CF ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.08 ;; P<SUB>T</SUB>(W) = 0.1 ;; R<SUB>1</SUB>(kW ) = 22 ;; R<SUB>2</SUB>(kW ) = ;; Package = SSSMini3-F1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR31A2 datasheet
  

 

Features, Applications

Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating to +125 Unit mW C

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL 2 fT VCB = 1 mA, = 200 MHz Conditions = -10 A, = -2 mA, = 0 VCB = 0 VCE = 0 VEB = 0 VCE = -10 mA, 0.3 mA VCC 1 k VCC 1 k Min Typ Max Unit A mA MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.


Collector output capacitance C (pF) (Common base, input open circuited) ob

Request for your special attention and precautions in using the technical information and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.


 

Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR31A3 Marking = CH ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31A4 Marking = CK ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR31A5 Marking = CL ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31A6 Marking = CN ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31AE Marking = DL ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31AM Marking = ef ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 2.2 ;; R2(kW ) = 10 ;; Package = SSSMini3-F1
UNR31AN Marking = ek ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR31AT Marking = en ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR3213
UNR321N
UNR32A0 Marking = KT ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR32A1 Marking = FK ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 10 ;; Package = SSSMini3-F1
UNR32A3 Marking = FN ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR32A4 Marking = FP ;; VCEO(V) = 50 ;; IC(A) = 0.8 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR32A5 Marking = HC ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR32A6 Marking = HD ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR32A7 Marking = he ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR32AA Marking = HL ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 100 ;; R2(kW ) = 100 ;; Package = SSSMini3-F1
UNR32AM Marking = KH ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 2.2 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR32AN Marking = KL ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR4110 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
Same catergory

2SK3030 : VDSS(V) = 100 ;; ID(A) = 8 ;; RDS(on) (max)(W ) = 0.23 ;; RDS(on) (max) (VGS=4V)(W ) = 0.26 ;; Package = U-A1U-G2.

BB150 : BB150; VHF Variable Capacitance Diode. Product Supersedes data of 1996 May 03 File under Discrete Semiconductors, SC01 1998 Sep 15 Excellent linearity Very small plastic SMD package C28: 2.5 pF; ratio: 16 Low series resistance. APPLICATIONS Electronic tuning in VHF television tuners, band to 460 MHz VCO. The is a double implanted variable capacitance diode, fabricated in planar technology,.

NEZ7785-8DD : 4w/8w C-band Power GAAS Fet N-channel GAAS Mes Fet. The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat.

OM6502SR : 600V Discrete Hi-rel Igbt in a D2 Package. INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available Screened to MIL-S-19500, TX, TXV And S Levels The IGBT power transistor a high.

SD1407-16 : RF & Microwave Transistors, HF SSB Applications. 30 MHz 28 VOLTS IMD -30 dB COMMON EMITTER GOLD METALLIZATION P OUT 125 W MIN. WITH 15 dB GAIN The 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case C) Collector-Base Voltage.

TD62318AF : 4ch Low Input Active High-current Darlington Sink Driver.

TFD312S-K : Thyristors With Built-in Avalanche Diode. qWith built-in Avalanche diode qAverage on-state current: IT(AV)=3A qGate trigger current: IGT=10mA max qIsolation voltage: VISO=1500V(50Hz AC, RMS, 1min.) Repetitive peak off-state voltage Average on-state current RMS on-state current Surge on-state current Squared rated current and time product Peak forward gate voltage Peak reverse gate voltage Peak.

07104GOC : 110 A, SCR, TO-209AC. s: VRRM: 400 volts ; IT(RMS): 110 amps ; IGT: 100 mA ; Package Type: TO-94, 3 PIN ; Pin Count: 3.

AP10-5 : CAPACITOR, VARIABLE, FILM-POLY TETRAFLUOROETHYLENE, 2500 V, 0.8 pF - 10 pF, HORIZONTAL ADJUSTER, THROUGH HOLE MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: FILM-POLY TETRAFLUOROETHYLENE ; Capacitance Type: Variable ; Capacitance Range: 8.00E-7 to 1.00E-5 microF ; WVDC: 2500 volts ; Mounting Style:.

D5L60-4000 : 5 A, 600 V, SILICON, RECTIFIER DIODE. s: Package: TO-220, ITO-220, 2 PIN ; Number of Diodes: 1 ; VRRM: 600 volts ; IF: 5000 mA ; trr: 0.0500 ns.

DHT-6601 : POWER TRANSFORMER, 40 VA. s: Category: Power ; Other Transformer Types / Applications: STANDARD ; Mounting: Chassis ; Power Rating (VA): 40 VA.

FRSIIIA030055 : RESISTOR, VOLTAGE DEPENDENT, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD) ; Operating Temperature: -25 to 120 C (-13 to 248 F).

HF10A060ACB : SILICON, RECTIFIER DIODE. s: Package: 4 INCH, WAFER ; Number of Diodes: 1.

40798R : 2 ELEMENT, 470 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 2 ; Lead Style: Gull ; Application: General Purpose ; Inductance Range: 470 microH ; Rated DC Current: 50 milliamps.

7446223001 : 2 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 2 ; Lead Style: WIRE ; Standards and Certifications: RoHS ; Application: General Purpose ; Inductance Range: 1000 microH ; Rated DC Current: 3000 milliamps ; Operating Temperature: -25 to 125 C (-13 to 257 F).

8100MCM1016RGN211C : CAP,AL2O3,10UF,200VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

 
0-C     D-L     M-R     S-Z