Details, datasheet, quote on part number: UNR31A5
PartUNR31A5
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = CL ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.08 ;; P<SUB>T</SUB>(W) = 0.1 ;; R<SUB>1</SUB>(kW ) = 10 ;; R<SUB>2</SUB>(kW ) = ;; Package = SSSMini3-F1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR31A5 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Suitable for high-density mounting downsizing of the equipment Contribute to low power consumption

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation * Junction temperature Storage temperature

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 fT VCB = 1 mA, = 200 MHz Conditions = -10 µA, = -2 mA, = 0 VCB = 0 VCE = 0 VEB = 0 VCE = -10 mA, 0.3 mA VCC 1 k VCC 1 k Min Typ Max Unit µA mA MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.


Collector output capacitance C (pF) (Common base, input open circuited) ob

Request for your special attention and precautions in using the technical information and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.


 

Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR31A6 Marking = CN ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31AE Marking = DL ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR31AM Marking = ef ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 2.2 ;; R2(kW ) = 10 ;; Package = SSSMini3-F1
UNR31AN Marking = ek ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR31AT Marking = en ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR3213
UNR321N
UNR32A0 Marking = KT ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR32A1 Marking = FK ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 10 ;; Package = SSSMini3-F1
UNR32A3 Marking = FN ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR32A4 Marking = FP ;; VCEO(V) = 50 ;; IC(A) = 0.8 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR32A5 Marking = HC ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR32A6 Marking = HD ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR32A7 Marking = he ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1
UNR32AA Marking = HL ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 100 ;; R2(kW ) = 100 ;; Package = SSSMini3-F1
UNR32AM Marking = KH ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 2.2 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR32AN Marking = KL ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1
UNR4110 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
UNR4121 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UNR4121UN4121
UNR4122 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
Same catergory

1PMT5283 : Current Limiter Diode. Surface-mount equivalent to 1N5283 thru 1N5314 series Popular Microsemi Powermite® surface-mount package Nominal current regulation from 0.22 and 4.70 mA Broad operating voltage Constructed with an Oxide Passivated All Diffused Die Full metallic bottom eliminates flux entrapment Integral Heat Sink Locking Tabs for excellent thermal dissipation and improved.

2SC1214 : . Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

BZV85-39 : Voltage Regulator Diodes. Total power dissipation: max. 1.3 W Tolerance series: approx. ±5% Working voltage range: nom. V (E24 range) Non-repetitive peak reverse power dissipation: max. 60 W. APPLICATIONS Stabilization purposes. Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx.

CM15MD1-24H : Type = Igbt Module ;; Voltage = 1200V ;; Current = 15A ;; Circuit Configuration = 3-Phase Converter + Inverter ;; Recommended For Designs =   ;; Switching Loss Curves =.

FQPF10N20L : 200V N-channel Logic Level QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.

NDH831N : Enhancement N-Channel. N-channel Enhancement Mode Field Effect Transistor Not Recommended For New Designs.

SBL4030PTthruSBL4040PT : 5 to 100 Amp. Schottky Rectifier. Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Dual rectifier construction, positive center-tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free-wheeling, and polarity.

SFT12G : Glass Passivated. Pakage = TS-1 ;; Max. Reverse Voltage VRM (V)= 100 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 30.

Z1000PA100A : . SPECIAL PACKAGE HIGH ENERGY METAL OXIDE VARISTORS Voltage Ratings Varistor Peak Voltage Type VAC Volts RMS VDC Volts Energy Min. Volts Max. Volts Maximum Operating Conditions Max. Clamping Voltage Volts Maximum Power Dissipation: Z33M-1.5 watt; Z60M-2.5 watt; PA-1.0 watt Typical response time is less than 15 nanoseconds. Mailing Address: P.O. Box 211 s Lucernemines,.

02DZ5.6-Y : 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE.

08051K9R1BBTTR : CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 100 V, 0.0000091 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Capacitor Type: SILICON DIOXIDE AND NITRIDE ; RoHS Compliant: Yes ; Capacitance Range: 9.10E-6 microF ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology ; EIA Case Size: 0805 ; Applications: General.

ASPI-3012S-100M : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: ONE SURFACE ; Standards and Certifications: RoHS ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Inductance Tolerance: 20 (+/- %) ; DCR: 0.2650 ohms ; Rated.

CIC05J600AC : 1 FUNCTIONS, 1.5 A, FERRITE CHIP. s: Devices in Package: 1 ; EIA Case Size: EIA STD PACKAGE SIZE 0402, 2 PIN ; Standards and Certifications: RoHS ; DCR: 0.1000 ohms ; Rated DC Current: 1500 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F).

FS0201SN00RB : 1.25 A, 700 V, SCR. s: VDRM: 700 volts ; VRRM: 700 volts ; IT(RMS): 1.25 amps ; IGT: 0.0200 mA ; Standards and Certifications: RoHS ; Package Type: PLASTIC PACKAGE-4 ; Pin Count: 4.

MNT-LC32030-C4 : 32 A, 200 V, N AND P-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; Package Type: SMARTPACK-10.

PHE448RB4150J : CAPACITOR, FILM/FOIL, POLYPROPYLENE, 1600 V, 0.0015 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 0.0015 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 1600 volts ; Mounting Style: Through Hole ; Operating.

S4008LTP : 8 A, 400 V, SCR, TO-220AB. s: VDRM: 400 volts ; VRRM: 400 volts ; IT(RMS): 8 amps ; IGT: 15 mA ; Package Type: ROHS COMPLIANT, PLASTIC PACKAGE-3 ; Pin Count: 3.

SCP-5592 : 1 A, 4 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Anode ; Diode Type: General Purpose ; IF: 1000 mA ; Pin Count: 5 ; Number of Diodes: 4.

SJ5438R1 : 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-66. s: Polarity: PNP. Bipolar Power Transistor TO­63 Hermetic Package Fast Switching TO­66 Metal Package. Pin 1 ­ Base Pin 2 ­ Emitter Case ­ Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO IC PD TSTG , TJ Collector ­ Emitter Voltage Continuous Collector Current Total Device Dissipation Derate above 100°C Storage and Operating Junction Temperature.

STL8DN6LF3 : POWER, FET. Dual N-channel 22.5 m typ., 7.8 A STripFETTM III Power MOSFET in PowerFLATTM 5x6 double island package Logic level VGS(th) 175 °C junction temperature 100% avalanche rated Applications Switching applications Automotive Figure 1. Internal schematic diagram This device is a dual N-channel enhancement mode Power MOSFET produced using STMicroelectronics'.

 
0-C     D-L     M-R     S-Z