|Category||Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)|
|Title||RETs (Resistor Equipped transistors)|
|Description||Marking = CL ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.08 ;; P<SUB>T</SUB>(W) = 0.1 ;; R<SUB>1</SUB>(kW ) = 10 ;; R<SUB>2</SUB>(kW ) = ;; Package = SSSMini3-F1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download UNR31A5 datasheet
Suitable for high-density mounting downsizing of the equipment Contribute to low power consumption
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation * Junction temperature Storage temperature
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 fT VCB = 1 mA, = 200 MHz Conditions = -10 µA, = -2 mA, = 0 VCB = 0 VCE = 0 VEB = 0 VCE = -10 mA, 0.3 mA VCC 1 k VCC 1 k Min Typ Max Unit µA mA MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Collector output capacitance C (pF) (Common base, input open circuited) ob
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|UNR31A6 Marking = CN ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31AE Marking = DL ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR31AM Marking = ef ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 2.2 ;; R2(kW ) = 10 ;; Package = SSSMini3-F1|
|UNR31AN Marking = ek ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR31AT Marking = en ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR32A0 Marking = KT ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR32A1 Marking = FK ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 10 ;; Package = SSSMini3-F1|
|UNR32A3 Marking = FN ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR32A4 Marking = FP ;; VCEO(V) = 50 ;; IC(A) = 0.8 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR32A5 Marking = HC ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR32A6 Marking = HD ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR32A7 Marking = he ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR32AA Marking = HL ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 100 ;; R2(kW ) = 100 ;; Package = SSSMini3-F1|
|UNR32AM Marking = KH ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 2.2 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR32AN Marking = KL ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR4110 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1|
|UNR4121 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
|UNR4122 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
EEE-HA1C220R : 220µF Aluminum Capacitor Radial, Can - SMD 16V; CAP ALUM 220UF 16V 20% SMD Specifications: Capacitance: 220µF ; ESR (Equivalent Series Resistance): - ; Features: General Purpose ; Lifetime @ Temp.: 1000 Hrs @ 105°C ; Size / Dimension: 0.394" Dia (10.00mm) ; Lead Spacing: - ; Surface Mount Land Size: 0.406" L x 0.406" W (10.30mm x 10.30mm) ; Mounting Type: Surface Mount ; P
EEE-TG1E331Q : 330µF Aluminum Capacitor Radial, Can - SMD 25V; CAP ALUM 330UF 25V 20% SMD Specifications: Capacitance: 330µF ; ESR (Equivalent Series Resistance): 120.0 mOhm ; Features: General Purpose ; Lifetime @ Temp.: 1000 Hrs @ 125°C ; Size / Dimension: 0.492" Dia (12.50mm) ; Lead Spacing: - ; Surface Mount Land Size: 0.532" L x 0.532" W (13.50mm x 13.50mm) ; Mounting Type: Surface
ECE-V1HA4R7SR : 4.7µF Aluminum Capacitor Radial, Can - SMD 50V; CAP ALUM 4.7UF 50V 20% SMD Specifications: Capacitance: 4.7µF ; ESR (Equivalent Series Resistance): - ; Features: Bi-Polar ; Lifetime @ Temp.: 2000 Hrs @ 85°C ; Size / Dimension: 0.248" Dia (6.30mm) ; Lead Spacing: - ; Surface Mount Land Size: 0.260" L x 0.260" W (6.60mm x 6.60mm) ; Mounting Type: Surface Mount ; Package / Ca
ERJ-2RKF8660X : 866 Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES 866 OHM 1/10W 1% 0402 SMD Specifications: Resistance (Ohms): 866 ; Power (Watts): 0.1W, 1/10W ; Tolerance: ±1% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: ±100ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
ERJ-S03F3740V : 374 Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES ANTI-SULFUR 374 OHM 1% 0603 Specifications: Resistance (Ohms): 374 ; Power (Watts): 0.1W, 1/10W ; Tolerance: ±1% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: ±100ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
ERJ-2BWJR068X : 0.068 Ohm 0.125W, 1/8W Chip Resistor - Surface Mount; RESISTOR .068 OHM 1/8W 5% 0402 Specifications: Resistance (Ohms): 0.068 ; Power (Watts): 0.125W, 1/8W ; Tolerance: ±5% ; Packaging: Digi-Reel® ; Composition: Thick Film ; Temperature Coefficient: ±300ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
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XP0411200L : Transistor (bjt) - Arrays, Pre-biased Discrete Semiconductor Product 100mA 50V 150mW 2 PNP - Pre-Biased (Dual); TRANS ARRAY PNP/PNP W/RES S MINI Specifications: Transistor Type: 2 PNP - Pre-Biased (Dual) ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 150mW ; Resistor - Base (R1) (Ohms): 22K ; Resistor - Emitter Base (R2) (Ohms): 22K ; Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10m
DRA2123Y : 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR Specifications: Polarity: PNP ; Package Type: ROHS COMPLIANT, MINI3-G3-B, 3 PIN
1PMT5283 : Current Limiter Diode. Surface-mount equivalent to 1N5283 thru 1N5314 series Popular Microsemi Powermite® surface-mount package Nominal current regulation from 0.22 and 4.70 mA Broad operating voltage Constructed with an Oxide Passivated All Diffused Die Full metallic bottom eliminates flux entrapment Integral Heat Sink Locking Tabs for excellent thermal dissipation and improved.
2SC1214 : . Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.
BZV85-39 : Voltage Regulator Diodes. Total power dissipation: max. 1.3 W Tolerance series: approx. ±5% Working voltage range: nom. V (E24 range) Non-repetitive peak reverse power dissipation: max. 60 W. APPLICATIONS Stabilization purposes. Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx.
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FQPF10N20L : 200V N-channel Logic Level QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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SBL4030PTthruSBL4040PT : 5 to 100 Amp. Schottky Rectifier. Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Dual rectifier construction, positive center-tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free-wheeling, and polarity.
SFT12G : Glass Passivated. Pakage = TS-1 ;; Max. Reverse Voltage VRM (V)= 100 ;; Max. Aver. Rect. Current io (A)= 1 ;; Ifsm (A)= 30.
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CIC05J600AC : 1 FUNCTIONS, 1.5 A, FERRITE CHIP. s: Devices in Package: 1 ; EIA Case Size: EIA STD PACKAGE SIZE 0402, 2 PIN ; Standards and Certifications: RoHS ; DCR: 0.1000 ohms ; Rated DC Current: 1500 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F).
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MNT-LC32030-C4 : 32 A, 200 V, N AND P-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel, P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; Package Type: SMARTPACK-10.
PHE448RB4150J : CAPACITOR, FILM/FOIL, POLYPROPYLENE, 1600 V, 0.0015 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 0.0015 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 1600 volts ; Mounting Style: Through Hole ; Operating.
S4008LTP : 8 A, 400 V, SCR, TO-220AB. s: VDRM: 400 volts ; VRRM: 400 volts ; IT(RMS): 8 amps ; IGT: 15 mA ; Package Type: ROHS COMPLIANT, PLASTIC PACKAGE-3 ; Pin Count: 3.
SCP-5592 : 1 A, 4 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Anode ; Diode Type: General Purpose ; IF: 1000 mA ; Pin Count: 5 ; Number of Diodes: 4.
SJ5438R1 : 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-66. s: Polarity: PNP. Bipolar Power Transistor TO63 Hermetic Package Fast Switching TO66 Metal Package. Pin 1 Base Pin 2 Emitter Case Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO IC PD TSTG , TJ Collector Emitter Voltage Continuous Collector Current Total Device Dissipation Derate above 100°C Storage and Operating Junction Temperature.
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