|Category||Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)|
|Title||RETs (Resistor Equipped transistors)|
|Description||Marking = DL ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.08 ;; P<SUB>T</SUB>(W) = 0.1 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = ;; Package = SSSMini3-F1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download UNR31AE datasheet
Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating to +125 Unit mW °C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cut-off current (Emitter open) Collector-emitter cut-off current (Base open) Emitter-base cut-off current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL 2 fT VCB = 1 mA, = 200 MHz Conditions = -10 µA, = -2 mA, = 0 VCB = 0 VCE = 0 VEB = 0 VCE = -10 mA, 0.3 mA VCC 1 k VCC 1 k Min Typ Max Unit µA mA MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Collector output capacitance C (pF) (Common base, input open circuited) ob
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|UNR31AM Marking = ef ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 2.2 ;; R2(kW ) = 10 ;; Package = SSSMini3-F1|
|UNR31AN Marking = ek ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR31AT Marking = en ;; VCEO(V) = -50 ;; IC(A) = -0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR32A0 Marking = KT ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR32A1 Marking = FK ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 10 ;; Package = SSSMini3-F1|
|UNR32A3 Marking = FN ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 47 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR32A4 Marking = FP ;; VCEO(V) = 50 ;; IC(A) = 0.8 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR32A5 Marking = HC ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR32A6 Marking = HD ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR32A7 Marking = he ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 22 ;; R2(kW ) = ;; Package = SSSMini3-F1|
|UNR32AA Marking = HL ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 100 ;; R2(kW ) = 100 ;; Package = SSSMini3-F1|
|UNR32AM Marking = KH ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 2.2 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR32AN Marking = KL ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR4110 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1|
|UNR4121 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
|UNR4122 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
|UNR4123 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
2SK06552SK655 : . Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings to +150 Unit mW °C G High-speed switching G Allowing to supply with the radial taping Parameter Drain to Source cut-off current Gate to Source leakage.
BUL54BSMD : Screening Options Available = ;; Polarity = NPN ;; Package = SMD1 (TO276AB) ;; Vceo = 400V ;; IC(cont) = 5A ;; HFE(min) = 15 ;; HFE(max) = - ;; @ Vce/ic = 5V / 1A ;; FT = 20MHz ;; PD = 70W.
GT15J311SM : Vces (volts) = 600 ;; Ic (amps) = 15 ;; Vce (sat) Max = 2.7 ;; Ton (usec) = 0.4 ;; Toff (usec) = 0.5 ;; Additional Information = .
IRHNA7Z60 : Repetitive Avalanche And Dv/dt Rated HexFET(r) Transistor 30v 75a. Part Number IRHNA4Z60 IRHNA8Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) ID 75*A International Rectifier's RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have.
MGFC39V3742A : 3.7-4.2GHz Band 8W Internally Matched GAAS Fet.
SKM195GAL124DN : Semitrans (r) M Low Loss Igbt Modules. )HDWXUHV 1.KDQQHO KRPRJHQHRXV 6LOL.RQ VWUX.WXUH 137,*%7 1RQ SXQ.K WKURXJK /RZ VDWXUDWLRQ YROWDJH /RZ LQGX.WDQ.H.DVH /RZ WDLO.XUUHQW ZLWK ORZ WHPSHUDWXUH GHSHQGHQ.H +LJK VKRUW.LU.XLW.DSDELOLW\ VHOI OLPLWLQJ WR ,.QRP )DVW VRIW LQYHUVH GLRGHV :LWKRXW KDUG PRXOG /DUJH.OHDUDQ.H PP DQG.UHHSDJH GLVWDQ.HV PP 7\SL.DO $SSOL.DWLRQV 6ZLW.KLQJ QRW IRU OLQHDU XVH 6ZLW.KHG.
02016D104KAT4A : CAPACITOR, CERAMIC, MULTILAYER, 6.3 V, X5R, 0.1 uF, SURFACE MOUNT, 0201. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 6.3 volts ; Mounting Style:.
A12F80MS02 : 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA. s: Package: DO-4, DO-4, 1 PIN ; Number of Diodes: 1 ; VRRM: 800 volts ; IF: 12000 mA ; trr: 0.2000 ns.
DO5022H-103MLB : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Inductance Tolerance: 20 (+/- %) ; DCR: 0.0260 ohms ; SRF: 28 MHz ; Testing Frequency: 100 kHz ; Operating.
IRFF9210-JQR-B : 1.5 A, 200 V, 3.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 3.45 ohms ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN ; Number of units in IC: 1.
PTFB182503ELV1 : L BAND, Si, N-CHANNEL, RF POWER, MOSFET. s: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 65 volts ; Package Type: GREEN, H-33288-6, 6 PIN ; Number of units in IC: 1.
SMM02040B7503JB3 : RESISTOR, METAL FILM, 0.25 W, 5 %, 100 ppm, 750000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), LEAD/ROHS COMPLIANT ; Resistance Range: 750000 ohms ; Tolerance: 5 +/- % ; Temperature Coefficient: 100 Â±ppm/Â°C ; Power Rating: 0.2500 watts.
STTB6006TV1 : 30 A, 600 V, SILICON, RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, High Voltage ; IF: 30000 mA ; RoHS Compliant: RoHS ; Package: PLASTIC, ISOTOP-4 ; Pin Count: 4 ; Number of Diodes: 2.
UUR1H221MNT1GS : CAP,AL2O3,220UF,50VDC,20% -TOL,20% +TOL.
13D : RESISTOR, CURRENT SENSE, 3 W, 0.5 %, 0.005 ohm - 0.2 ohm, THROUGH HOLE MOUNT. s: Category / Application: Current Sensing, General Use ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, LEAD/ROHS COMPLIANT ; Operating Temperature: -55 to 275 C (-67 to 527 F).
2.5DMB30MCA16X35.5 : CAPACITOR, ELECTRIC DOUBLE LAYER, 2.5 V, 30000000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: ELECTRIC DOUBLE LAYER ; Applications: General Purpose ; RoHS Compliant: Yes ; Capacitance Range: 3.00E7 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 2.5 volts ; Mounting Style: Through Hole ; Operating Temperature:.
2N698.MOD : 200 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD. s: Polarity: NPN ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN.
9303R10KL.25CT : RES,TAPPED,WIREWOUND,10K OHMS,5% +/-TOL. s: Potentiometer Type: Standard Potentiometer.