|Category||Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)|
|Title||RETs (Resistor Equipped transistors)|
|Description||Marking = KH ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.08 ;; P<SUB>T</SUB>(W) = 0.1 ;; R<SUB>1</SUB>(kW ) = 2.2 ;; R<SUB>2</SUB>(kW ) = 47 ;; Package = SSSMini3-F1|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download UNR32AM datasheet
Suitable for high density package and downsizing of the equipment Contribute to low power consumption
Parameter Rating of element Overall Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating to +125 Unit mW °C
Parameter Collector to base voltage Collector to emittter voltage Collector cutoff current Symbol VCBO VCEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High level output voltage Low level output voltage Input resistance Resistance ratio Gain bandwidth product IEBO hFE VCE(sat) VOH VOL R2 fT VCB = -2 mA, = 200 MHz Conditions = 10 µA, = 2 mA, = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 10 mA, 0.3 mA VCC 1 k VCC 1 k Min mA MHz Typ Max Unit V µA
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|UNR32AN Marking = KL ;; VCEO(V) = 50 ;; IC(A) = 0.08 ;; PT(W) = 0.1 ;; R1(kW ) = 4.7 ;; R2(kW ) = 47 ;; Package = SSSMini3-F1|
|UNR4110 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1|
|UNR4121 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
|UNR4122 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
|UNR4123 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
|UNR4124 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
|UNR412X Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
|UNR412Y Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1|
|UNR4210 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1|
|UNR4211 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1|
|UNR4212 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1|
|UNR4213 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1|
1N5396 : 1.5 Ampere General Purpose Rectifiers. Peak Repetitive Reverse Voltage Average Rectified Forward Current,.375 " lead length = 75°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Power Dissipation Thermal.
2SC3669 : NPN Epitaxial Type ( Power Amplifier, Switching Applications ).
2SK3549-01 : High voltage. High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt.
BUZ21SMD : SIPMOS®. Maximum Ratings Parameter Symbol Values Unit Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 IEC climatic category, DIN IEC 68-1 Electrical Characteristics,.
FKV550T : . Symbol VDSS VGSS ID (pulse) *1 PD EAS I AS Tch Tstg Ratings (Tc to +150 Symbol V (BR)DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) t d (off) tf VSD min 50 Ratings typ max Unit = 50A, VGS = 25A, VDD = 0.48, VGS = 10V See Figure 2 on Page 5. VDS = 1.0MHz, VGS = 0V .
KTA1045D : = General Purpose Transistor ;; Package = Dpak. LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTC2025D/L CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature.
PSRDAxx-4Series : . APPLICA TIONS Ethernet - 10/100 Base T Computer I/O Ports- SCSI, FireWire & USB Set Top Box Protection IEC COMPA TIBILITY (EN61000-4) 61000-4-2 (ESD): Air - 15kv, Contact 8kv 61000-4-4 (EFT): 5/50ns 61000-4-5 (Surge): 8/20µs - Level 2(Line-Gnd) & Level 3(Line-Line) FEA TURES 500 Watts Peak Pulse Power Dissipation(tp = 8/20µs) Unidirectional Configuration.
000-7412-35 : DATACOM TRANSFORMER FOR LAN APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F).
APTC60SKM24CT1G : 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 600 volts ; rDS(on): 0.0240 ohms ; Package Type: ROHS COMPLIANT, SP1, 12 PIN ; Number of units in IC: 1.
B40C3300-G : 5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 250000 mA ; RoHS Compliant: RoHS ; Package: LEAD FREE, PLASTIC, RS-5, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.
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IRL510-001 : 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.5400 ohms ; Number of units in IC: 1.
RG1/4ZEROHMLF : JUMPER, 0.25 W, 0 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 0.0 ohms ; Power Rating: 0.2500 watts (3.35E-4 HP) ; Operating Temperature: 70 C (158 F).
W005G/1-E4 : 1.5 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 50000 mA ; RoHS Compliant: RoHS ; Package: PLASTIC, CASE WOG, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.
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2N3117LEADFREE : 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18. s: Polarity: NPN. : The CENTRAL SEMICONDUCTOR 2N3117 type is an NPN silicon transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature ELECTRICAL SYMBOL.
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