Details, datasheet, quote on part number: UNR32AN
PartUNR32AN
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = KL ;; V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.08 ;; P<SUB>T</SUB>(W) = 0.1 ;; R<SUB>1</SUB>(kW ) = 4.7 ;; R<SUB>2</SUB>(kW ) = 47 ;; Package = SSSMini3-F1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR32AN datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating to +125 Unit mW C

Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL 2 fT VCB = -2 mA, = 200 MHz Conditions = 10 A, = 2 mA, = 0 VCB = 0 VCE = 0 VEB = 0 VCE = 10 mA, 0.3 mA VCC 1 k VCC 1 k Min Typ Max Unit A mA MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.


Collector output capacitance C (pF) (Common base, input open circuited) ob

Request for your special attention and precautions in using the technical information and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.


 

Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR4110 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
UNR4121 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UNR4121UN4121
UNR4122 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UNR4122UN4122
UNR4123 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UNR4123UN4123
UNR4124 Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UNR4124UN4124
UNR412X Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UNR412XUN412X
UNR412Y Marking = ;; VCEO(V) = -50 ;; IC(A) = -0.5 ;; PT(W) = 0.3 ;; R1(kW ) = 2.2 ;; R2(kW ) = 2.2 ;; Package = NS-A1NS-B1
UNR412YUN412Y
UNR4210 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
UNR4210UN4210
UNR4211 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
UNR4211UN4211
UNR4212 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
UNR4212UN4212
UNR4213 Marking = ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.3 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = NS-A1NS-B1
UNR4213UN4213

AN8009M : 3-Pin Low Dropout Regulator VI(V) = 20 ;; PD(W) = 0.65 ;; VO(V) = 2 ;; IO(Peak)(A) = ;; VDIF(V) = 0.06 ;; Package =

ECA-1VM471B : 470F Aluminum Capacitor Radial, Can 35V; CAP ALUM 470UF 35V 20% RADIAL Specifications: Capacitance: 470F ; ESR (Equivalent Series Resistance): - ; Features: General Purpose ; Lifetime @ Temp.: 2000 Hrs @ 85C ; Size / Dimension: 0.394" Dia (10.00mm) ; Lead Spacing: 0.197" (5.00mm) ; Surface Mount Land Size: - ; Mounting Type: Through Hole ; Package / Case: Radial, Can

ERJ-14YJ113U : 11K Ohm 0.5W, 1/2W Chip Resistor - Surface Mount; RES 11K OHM 1/2W 5% 1210 SMD Specifications: Resistance (Ohms): 11K ; Power (Watts): 0.5W, 1/2W ; Tolerance: 5% ; Packaging: Digi-Reel ; Composition: Thick Film ; Temperature Coefficient: 200ppm/C ; Lead Free Status: Contains Lead ; RoHS Status: RoHS Non-Compliant

ERA-6AEB9530V : 953 Ohm 0.125W, 1/8W Chip Resistor - Surface Mount; RES 953 OHM 1/8W .1% 0805 SMD Specifications: Resistance (Ohms): 953 ; Power (Watts): 0.125W, 1/8W ; Tolerance: 0.1% ; Packaging: Tape & Reel (TR) ; Composition: Thin Film ; Temperature Coefficient: 25ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERJ-S1TF5230U : 523 Ohm 1W Chip Resistor - Surface Mount; RES ANTI-SULFUR 523 OHM 1% 2512 Specifications: Resistance (Ohms): 523 ; Power (Watts): 1W ; Tolerance: 1% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: 100ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERJ-P06J363V : 36K Ohm 0.25W, 1/4W Chip Resistor - Surface Mount; RES ANTI-SURGE 36K OHM 5% 0805 Specifications: Resistance (Ohms): 36K ; Power (Watts): 0.25W, 1/4W ; Tolerance: 5% ; Packaging: Cut Tape (CT) ; Composition: Thick Film ; Temperature Coefficient: 200ppm/C ; Lead Free Status: Contains Lead ; RoHS Status: RoHS Non-Compliant

ERJ-1GNF34R8C : 34.8 Ohm 0.05W, 1/20W Chip Resistor - Surface Mount; RES 34.8 OHM 1/20W 1% 0201 SMD Specifications: Resistance (Ohms): 34.8 ; Power (Watts): 0.05W, 1/20W ; Tolerance: 1% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: 200ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERA-3AEB3480V : 348 Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES 348 OHM 1/10W .1% 0603 SMD Specifications: Resistance (Ohms): 348 ; Power (Watts): 0.1W, 1/10W ; Tolerance: 0.1% ; Packaging: Tape & Reel (TR) ; Composition: Thin Film ; Temperature Coefficient: 25ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERJ-14NF4120U : 412 Ohm 0.5W, 1/2W Chip Resistor - Surface Mount; RES 412 OHM 1/2W 1% 1210 SMD Specifications: Resistance (Ohms): 412 ; Power (Watts): 0.5W, 1/2W ; Tolerance: 1% ; Packaging: Digi-Reel ; Composition: Thick Film ; Temperature Coefficient: 100ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

ERZ-CF2MK330 : Tv - Varistors, Mov Circuit Protection 50A 33V; SMD 33V 50A ZNR SUR ABSORB BK Specifications: Maximum AC Volts: 20VAC ; Maximum DC Volts: 26VDC ; Current-Surge: 50A ; Package / Case: 2-SMD, J Lead ; Varistor Voltage: 33V ; Energy: 0.60J ; Number of Circuits: 1 ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

UNR31A100L : Transistor (bjt) - Single, Pre-biased Discrete Semiconductor Product 80mA 50V 100mW PNP - Pre-Biased; TRANS PNP W/RES 35 HFE SSSMINI3P Specifications: Transistor Type: PNP - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 80mA ; Power - Max: 100mW ; Resistor - Base (R1) (Ohms): 10K ; Resistor - Emitter Base (R2) (Ohms): 10K ; Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA ; Curren

ECWH12H102HR : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 1600 V, 0.001 uF, THROUGH HOLE MOUNT Specifications: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-3 microF ; Capacitance Tolerance: 3 (+/- %) ; WVDC: 1600 volts ; Mounting Style: Thro

Same catergory

2N3920A : = Low Power Field Effect Transistor ;; Case Style = TO72 ;; Geometry = DMN113.3 ;; Page Number = E14+E15.

CPT20135 : Schottky Rectifier, Package : MD3CC.

KSP8099 : Epitaxial. Amplifier Transistor, Npn, Collector-emitter=80V, Collector Power Dissipation=625 MW.

MJ15016 : Screening Options Available = ;; Polarity = PNP ;; Package = TO3 (TO204AA) ;; Vceo = 120V ;; IC(cont) = 15A ;; HFE(min) = 10 ;; HFE(max) = 70 ;; @ Vce/ic = 2V / 4A ;; FT = 2.2MHz ;; PD = 180W.

TPIC5302 : Array. 3-channel Independent Power Dmos Array. Low rDS(on). 0.3 Typ High-Voltage Outputs. 60 V Pulsed Current. 7 A Per Channel Fast Commutation Speed The is a monolithic power DMOS array that consists of three electrically isolated independent N-channel enhancement-mode DMOS transistors. The TPIC5302 is offered in a standard 16-pin small-outline surface-mount (D) package. The TPIC5302 is characterized.

03028-BR152BJZJ : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BR, 0.0015 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0015 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.

03028-BR472AJZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.0047 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0047 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

03028BX681BJZC : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BX, 0.00068 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 6.80E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.

05002330CGMC : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000033 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.30E-5 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface.

FCHS20A12 : 20 A, 120 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 20000 mA ; Package: PLASTIC, SIMILAR TO TO-220AB, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

RH-100.249OHM1.0% : RESISTOR, WIRE WOUND, 10 W, 1 %, 100 ppm, 0.249 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Bolt-on Chassis ; Resistance Range: 0.2490 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power Rating: 10 watts (0.0134 HP) ; Operating Temperature: -55 to 250 C (-67.

TIP41ALEADFREE : 6 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB. s: Polarity: NPN ; Package Type: TO-220, TO-220, 3 PIN.

VEC2315 : SMALL SIGNAL, FET.

Y1485V0001AT9R : RES NET,METAL FOIL,10K OHMS,25WV,.05% +/-TOL,-3,3PPM TC,1611 CASE. s: Configuration: Chip Array ; Category / Application: General Use.

2SK2832-01R : 50 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0200 ohms ; Package Type: TO-220, TO-220AB, 3 PIN.

 
0-C     D-L     M-R     S-Z