Details, datasheet, quote on part number: UNR511MUN511M
PartUNR511MUN511M
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
Description
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR511MUN511M datasheet
  

 

Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Note) The Part numbers in the Parenthesis show conventional part number.

Parameter Collector cutoff current UNR5112/5114/511E/511D/511M/511N/511T UNR5113 Emitter cutoff current UNR5118/511L/511V UNR511Z Collector to base voltage UNR511N/511T/511V/511Z Collector to emitter voltage UNR5112/511E UNR5113/5114/511M Forward current transfer ratio UNR511V UNR511Z Collector to emitter saturation voltage UNR511V Output voltage high level Output voltage low level UNR511D UNR511E Transition frequency UNR5112/5117/511T UNR5113/5110/511D/511E Input resistance UNR5119 UNR511H/511M/511V


 

Related products with the same datasheet
UNR5111UN5111
UNR5112UN5112
UNR5113UN5113
UNR5114UN5114
UNR5115UN5115
UNR5116UN5116
UNR5117UN5117
UNR5118UN5118
UNR5119UN5119
UNR511DUN511D
UNR511EUN511E
UNR511FUN511F
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR511N Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UNR511NUN511N
UNR511T Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UNR511TUN511T
UNR511V Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UNR511VUN511V
UNR511Z Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UNR511ZUN511Z
UNR5154 Marking = ev ;; VCEO(V) = -30 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(kW ) = 0.213 ;; Package = SMini3-G1
UNR5154UN5154
UNR5174 Marking = 7P ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = SMini3-G1
UNR5210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1
UNR5225 Marking = FZ ;; VCEO(V) = 20 ;; IC(A) = 0.6 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SMini3-G1
UNR5274 Composite Device - Transistors With Built-in Resistor
UNR6110 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR6110UN6110
UNR6111 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR6111UN6111
UNR6112 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR6112UN6112
UNR6113 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
 
0-C     D-L     M-R     S-Z