|Category||Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)|
|Company||Panasonic Industrial Company/Electronic Components|
|Datasheet||Download UNR5154UN5154 datasheet
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg
High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. S-Mini type package, allowing automatic insertion through tape packing and magazine packing.
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency
Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1/R2 fT VCB = 200MHz Conditions = 0 VCB = 0 VCE = 0 VEB = 0 VCE 0.33mA VCC = 1k VCC = 1k min typ max Unit µA mA MHzNote) The Part number in the Parenthesis shows conventional part number.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
|Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components|
|UNR5174 Marking = 7P ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(kW ) = 47 ;; Package = SMini3-G1|
|UNR5210 Marking = 8L ;; VCEO(V) = 50 ;; IC(A) = 0.1 ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(kW ) = ;; Package = SMini3-G1|
|UNR5225 Marking = FZ ;; VCEO(V) = 20 ;; IC(A) = 0.6 ;; PT(W) = 0.15 ;; R1(kW ) = 10 ;; R2(kW ) = ;; Package = SMini3-G1|
|UNR5274 Composite Device - Transistors With Built-in Resistor|
|UNR6110 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor|
|UNR6111 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor|
|UNR6112 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor|
|UNR6113 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor|
|UNR6114 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor|
|UNR6115 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor|
|UNR6116 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor|
|UNR6117 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor|
|UNR6118 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor|
MAZW062H : VZ(V) = 6.2 ;; Package = SSSMini3-F1
EEE-HA1E220WR : 220µF Aluminum Capacitor Radial, Can - SMD 25V; CAP ALUM 220UF 25V 20% SMD Specifications: Capacitance: 220µF ; ESR (Equivalent Series Resistance): - ; Features: General Purpose ; Lifetime @ Temp.: 1000 Hrs @ 105°C ; Size / Dimension: 0.394" Dia (10.00mm) ; Lead Spacing: - ; Surface Mount Land Size: 0.406" L x 0.406" W (10.30mm x 10.30mm) ; Mounting Type: Surface Mount ; P
ECQ-M4153KZ : 0.015µF Film Capacitor Radial; CAP FILM 0.015UF 400VDC RADIAL Specifications: Capacitance: 0.015µF ; Tolerance: ±10% ; Dielectric Material: Polyester ; Package / Case: Radial ; Packaging: Bulk ; Lead Spacing: 0.492" (12.50mm) ; ESR (Equivalent Series Resistance): - ; Mounting Type: Through Hole ; Features: General Purpose ; Lead Free Status: Lead Free ; RoHS S
ELJ-NDR39JF : Fixed Inductors, Coils, Choke 390nH 150mA 0805 (2012 Metric) Non-Magnetic Core; INDUCTOR .39UH 5% FIXED SMD Specifications: Inductance: 390nH ; Tolerance: ±5% ; Package / Case: 0805 (2012 Metric) ; Packaging: Digi-Reel® ; Type: Non-Magnetic Core ; Current: 150mA ; Mounting Type: Surface Mount ; Q @ Freq: 10 @ 25.2MHz ; Frequency - Self Resonant: 150MHz ; DC Resistance (DCR): 2.37 Ohm Max ; Shielding: Unsh
ERX-2SJ1R5 : 1.5 Ohm 2W Through Hole Resistors; RES 1.5 OHM 2W 5% METAL FILM Specifications: Resistance (Ohms): 1.5 ; Power (Watts): 2W ; Tolerance: ±5% ; Packaging: Bulk ; Composition: Metal Film ; Temperature Coefficient: ±350ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
ERA-V27J820V : 82 Ohm 0.063W, 1/16W Chip Resistor - Surface Mount; RES 82 OHM 1/16W 2700PPM 5% 0603 Specifications: Resistance (Ohms): 82 ; Power (Watts): 0.063W, 1/16W ; Tolerance: ±5% ; Packaging: Cut Tape (CT) ; Composition: Metal Film ; Temperature Coefficient: ±2700ppm/°C ; Lead Free Status: Contains Lead ; RoHS Status: RoHS Non-Compliant
ERJ-S02F2152X : 21.5K Ohm 0.1W, 1/10W Chip Resistor - Surface Mount; RES ANTI-SULFUR 21.5KOHM 1% 0402 Specifications: Resistance (Ohms): 21.5K ; Power (Watts): 0.1W, 1/10W ; Tolerance: ±1% ; Packaging: Tape & Reel (TR) ; Composition: Thick Film ; Temperature Coefficient: ±200ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
ERA-6YEB241V : 240 Ohm 0.125W, 1/8W Chip Resistor - Surface Mount; RES 240 OHM 1/8W .1% 0805 SMD Specifications: Resistance (Ohms): 240 ; Power (Watts): 0.125W, 1/8W ; Tolerance: ±0.1% ; Packaging: Cut Tape (CT) ; Composition: Thin Film ; Temperature Coefficient: ±25ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
ERG-2SJ431A : 430 Ohm 2W Through Hole Resistors; RES 430 OHM 2W 5% METAL OXIDE Specifications: Resistance (Ohms): 430 ; Power (Watts): 2W ; Tolerance: ±5% ; Packaging: Tape & Reel (TR) ; Composition: Metal Oxide Film ; Temperature Coefficient: ±350ppm/°C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
UNR42160RA : Transistor (bjt) - Single, Pre-biased Discrete Semiconductor Product 100mA 50V 300mW NPN - Pre-Biased; TRANS NPN W/RES 210 HFE NS-B1 Specifications: Transistor Type: NPN - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 300mW ; Resistor - Base (R1) (Ohms): 4.7K ; Resistor - Emitter Base (R2) (Ohms): - ; Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA ; Curren
2SB1177TX : 7 A, 80 V, PNP, Si, POWER TRANSISTOR Specifications: Polarity: PNP
1N5400K : Low Power Rectifier. Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Repetitive peak reverse voltage Periodische Spitzensperrspannung.
2SJ597 : . Any and all SANYO products described or contained herein do not have s that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative.
EA40QC09-F : Device = SBD ;; Ripetitive Peak Reverse Voltage(V) = 90 ;; Average Rectified Current(A) = 4 ;; Condition(cace or Ambient Temperature) = Tc=130 ;; Surge Forward Current(A) = 40 ;; Maximam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to 150 ;; Peak Forward Voltage(V) = 0.85 ;; Peak Forward Current(A) = 2 ;; Peak Reverse.
LM385AXZ-2.5 : Micropower Voltage Reference Diode. The LM185-2.5/LM285-2.5/LM385-2.5 are micropower 2-terminal band-gap voltage regulator diodes. Operating over 20 mA current range, they feature exceptionally low dynamic impedance and good temperature stability. On-chip trimming is used to provide tight voltage tolerance. Since the LM-185-2.5 band-gap reference uses only transistors and resistors, low noise.
MAC997A6 : Sensitive Gate Triacs, Package: TO-92 (TO-226), Pins=3. Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92 package which is readily adaptable for use in automatic insertion equipment. OnePiece, InjectionMolded Package Blocking Voltage to 600 Volts Sensitive Gate Triggering in Four Trigger Modes (Quadrants).
NTE486 : Silicon NPN Transistor. RF High Frequency Amplifier.. : The is a silicon NPN high frequency RF transistor a TO39 type package designed for use in 12.5V UHF largesignal applications required in industrial equipment. : D Specified 12.5V, 470MHz Characteristics: Output Power = 0.75W Minimum Gain = 8dB Effeciency D S Parameter Data from to 1GHz Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO. 20V CollectorBase.
PZT2222A : Amplifier. NPN General Purpose Amplifier. This device is for use as a medium power amplifier and switch requiring collector currents to 500 mA. Sourced from Process 19. VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
SKKH92 : Semipack(r) 1 Thyristor/diode Modules. VRSM VRRM (dv/ VDRM dt)cr 400 600 V/µs ITRMS (maximum value for continuous operation) 150 A ITAV (sin. 180; Tcase 95 A SKKH 91/04 D SKKH D SKKH 92/06 D SKKH 92/08 D SKKH 92/12 E SKKH 92/14 E SKKH 92/16 E SKKH 92/18 E SEMIPACK® 1 Thyristor / Diode Modules SKKT 91 SKKT 92 SKKT 92B SKKL 922) SKKH 91 SKKH 92 SKMT 922) ITAV ID IRMS ITSM i 2t tgd tgr (di/dt)cr.
TIC226 : Silicon Triacs. Series Silicon Triacs. 8 A RMS Glass Passivated Wafer 800 V Off-State Voltage Max IGT 50 mA (Quadrants - 3) absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC226D Repetitive peak off-state voltage (see Note TIC226S TIC226N Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) Peak on-state surge current.
03028-BR561AJZP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.00056 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 5.60E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.
050AT3901H : 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, WIRE ; Application: General Purpose, Power Choke ; Inductance Range: 3.9 microH ; Inductance Tolerance: 15 (+/- %) ; DCR: 0.0060 ohms ; Rated DC Current: 9500 milliamps ; SRF: 35 MHz ; Testing Frequency: 1 kHz ; Operating Temperature: -55 to 130 C (-67 to 266 F).
0805N100M501LDR : CAPACITOR, CERAMIC, MULTILAYER, 500 V, C0G, 0.00001 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.00E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 500 volts ; Temperature Coefficient: 30 ppm/Ā°C ; Mounting Style:.
CMDD2004BK : 0.225 A, 300 V, SILICON, SIGNAL DIODE. s: Package: PLASTIC, SUPERMINI-2 ; Number of Diodes: 1 ; IF: 225 mA.
CR051 : CAPACITOR, CERAMIC, MULTILAYER, 50 V, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Mounting Style: Through Hole ; Operating Temperature: -55 to 125 C (-67 to 257 F).
DZ2W510 : 51 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS.
FSG66C0405K : CAPACITOR, METALLIZED FILM, POLYPROPYLENE, 900 V, 4 uF, CHASSIS MOUNT. s: Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polypropylene ; Capacitance Range: 4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 900 volts ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -40 to 85 C (-40 to 185 F).
HT720.1101000 : CAPACITOR, FILM/FOIL, 1000 V, 0.1 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 1000 volts ; Mounting Style: Through Hole ; Operating Temperature: -55 to 125 C (-67 to 257 F).
KBPC2500GSP : 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 300000 mA ; VBR: 50 volts ; RoHS Compliant: RoHS ; Package: PLASTIC, KBPC, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.
201CMQ035-G : 100 A, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 100000 mA ; RoHS Compliant: RoHS ; Package: GREEN, PLASTIC, PRM4, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.
4-1623696-8 : RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 200 ppm, 1 ohm, SURFACE MOUNT, 2512. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 2512, CHIP, ROHS COMPLIANT ; Resistance Range: 1 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 200 Ā±ppm/Ā°C ; Power.