Details, datasheet, quote on part number: UNR5226
PartUNR5226
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = FZ ;; V<SUB>CEO</SUB>(V) = 20 ;; I<SUB>C</SUB>(A) = 0.6 ;; P<SUB>T</SUB>(W) = 0.15 ;; R<SUB>1</SUB>(kW ) = 10 ;; R<SUB>2</SUB>(kW ) = ;; Package = SMini3-G1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR5226 datasheet
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Features, Applications

Low collector to emitter saturation voltage VCE(sat) , optimum for the muting circuit. VCE(sat): 30 mA(typ.) The use with high current value is possible. IC: 600 mA

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO PT Tj Tstg Rating + 150 Unit B R2

Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio UNR5227 UNR5225/5226 VCE(sat) = 50 mA, mA R1/R2 RON = 1 kHz fT VCB = -50 mA, = 200 MHz 200 MHz 1.2 Symbol ICBO IEBO VCBO VCEO VEBO hFE Conditions VCB = 0 VEB = 1 ľA, = 1 mA, = 1 ľA, = 0 VCE mV k Min Typ Max 1 Unit ľA V

Collector to emitter saturation voltage Input resistance UNR5227 UNR5225 Resistance ratio ON-resistance

Transition frequency Note) Refer to RON measurment circuit
Collector to emitter saturation voltage VCE(sat) (mV)





 

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