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Details, datasheet, quote on part number:UNR5274
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Datasheet text preview:
Transistors with built-in Resistor
UNR5274
Silicon NPN epitaxial planar type
Unit : mm
(0.425)
For digital circuits Features
· High forward current transfer ratio hFE · Costs can be reduced through downsizing of the equipment and reduction of the number of parts. · S-Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing
01 0.3+0..0
0 10 0.15+0..05
3
1.25±0.10
2.1±0.1 5°
1
2
(0.65) (0.65) 1.3±0.1 2.0±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol V CBO V CEO IC PT Tj Tstg Rating 50 50 100 150 150 -55 to +150 Unit V V mA mW °C °C
10°
0.9±0.1
02 0.9+0..1
1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: 7R Internal Connection
R1 (10 k) B R2 E (47 k) C
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Forward voltage Transition frequency Symbol V CBO V CEO ICBO ICEO IEBO h FE VCE(sat) VOH VOL R1 R 1/ R 2 VF fT IF = 100 mA VCB = 10 V, IE = -1 mA, f = 200 MHz 150 Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k - 30% 0.17 10 0.21 4.9 0.2 +30% 0.25 1.20 80 0.25 Min 50 50 0.1 0.5 0.2 mA V V V k V MHz Typ Max Unit V V µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0 to 0.1
0.2±0.1
Publication date: January 2004
SJH00047AED
1
UNR5274
PT Ta
160 120 120 IB = 1.0 mA 0.9 mA 0.8 mA
IC VCE
Ta = 25°C 300
hFE IC
Ta = 75°C VCE = 10 V
Total power dissipation PT (mW)
Forward current transfer ratio hFE
Collector current IC (mA)
0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA
25°C 200 -25°C
80
0.2 mA 40 0.1 mA
100
40
0
0 0 40 80 120 160
0
2
4
6
8
10
12
0
1
10
102
1 03
Ambient temperature Ta (°C)
Collector-emitter voltage VCE
(V)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25°C
102
IO VIN
VO = 5 V Ta = 25°C
V IN I O
102 VO = 0.2 V Ta = 25°C
Output current IO (mA)
Input voltage VIN (V)
10
10
1
1
0
10
20
30
40
1
0
1
2
10 -1
1
10
102
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2
SJH00047AED
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