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Details, datasheet, quote on part number:UNR6111UN6111
 
 
Part:UNR6111UN6111
Category:Discrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
Description:
Company:Panasonic Industrial Company/Electronic Components
Datasheet:Download UNR6111UN6111 datasheet   File size : 262 kB
Request For quote:  Find where to buy UNR6111UN6111
 



Datasheet text preview:
Transistors with built-in Resistor
UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L
(UN6111/6112/6113/6114/6115/6116/6117/6118/6119/ 6110/611D/611E/611F/611H/611L)
Unit: mm
Silicon PNP epitaxial planer transistor
For digital circuits
(0.7)
6.9±0.1 (4.0)
2.5±0.1 (0.8)
(1.0) 3.5±0.1
0.65 max.
G
G
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping.
0 10 0.45+0..05 ­
14.5±0.5
I Features
(0.85)
I Resistance by Part Number
G G G G G G G G G G G G G G G
1.05±0.05 2.5±0.5
0 10 0.45+0..05 ­
2.5±0.5
UNR6111 UNR6112 UNR6113 UNR6114 UNR6115 UNR6116 UNR6117 UNR6118 UNR6119 UNR6110 UNR611D UNR611E UNR611F UNR611H UNR611L
(R1) 10k 22k 47k 10k 10k 4.7k 22k 0.51k 1k 47k 47k 47k 4.7k 2.2k 4.7k
(R2) 10k 22k 47k 47k -- -- -- 5.1k 10k -- 10k 22k 10k 10k 4.7k
1
2
3
1 : Emitter 2 : Collector 3 : Base MT-1-A1 Package
Internal Connection
R1
C
B
R2
E
I Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO V CEO IC PT Tj T stg
(Ta=25°C)
Ratings ­50 ­50 ­100 400 150 ­55 to +150 Unit V V mA mW °C °C
Note) The Part numbers in the Parenthesis show conventional part number.
(0.8)
1
Transistors with built-in Resistor
UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L
I Electrical Characteristics
Parameter Collector cutoff current UNR6111 UNR6112/6114/611E/611D Emitter cutoff current UNR6113 UNR6115/6116/6117/6110 UNR611F/611H UNR6119 UNR6118/611L Collector to base voltage Collector to emitter voltage UNR6111 Forward current transfer ratio UNR6112/611E UNR6113/6114 UNR6115*/6116*/6117*/6110* UNR611F/611D/6119/611H UNR6118/611L Collector to emitter saturation voltage Output voltage high level Output voltage low level UNR6113 UNR611D UNR611E Transition frequency UNR6111/6114/6115 UNR6112/6117 Input resistance UNR6113/6110/611D/611E UNR6116/611F/611L UNR6118 UNR6119 UNR611H UNR6111/6112/6113/611L UNR6114 Resistance ratio UNR6118/6119 UNR611D UNR611E UNR611F UNR611H
(Ta=25°C)
Symbol ICBO ICEO Conditions VCB = ­50V, IE = 0 VCE = ­50V, IB = 0 min typ max ­ 0.1 ­ 0.5 ­ 0.5 ­ 0.2 ­ 0.1 IEBO VEB = ­6V, IC = 0 ­ 0.01 ­1.0 ­1.5 ­2.0 VCBO VCEO IC = ­10µA, IE = 0 IC = ­2mA, IB = 0 ­50 ­50 35 60 hFE VCE = ­10V, IC = ­5mA 80 160 30 20 VCE(sat) VOH IC = ­10mA, IB = ­ 0.3mA VCC = ­5V, VB = ­ 0.5V, RL = 1k VCC = ­5V, VB = ­2.5V, RL = 1k VOL VCC = ­5V, VB = ­3.5V, RL = 1k VCC = ­5V, VB = ­10V, RL = 1k VCC = ­5V, VB = ­6V, RL = 1k fT VCB = ­10V, IE = 1mA, f = 200MHz 80 10 22 47 R1 (­30%) 4.7 0.51 1 2.2 0.8 0.17 0.08 R1/R2 3.7 1.7 0.37 0.17 1.0 0.21 0.1 4.7 2.14 0.47 0.22 1.2 0.25 0.12 5.7 2.6 0.57 0.27 (+30%) k ­4.9 ­ 0.2 ­ 0.2 ­ 0.2 ­ 0.2 MHz V ­ 0.25 V V 460 V V mA Unit µA µA
* hFE rank classification (UNR6115/6116/6117/6110)
Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460
2
Transistors with built-in Resistor
Common characteristics chart PT -- Ta
500
UNR6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L
Total power dissipation PT (mW)
400
300
200
100
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Characteristics charts of UNR6111 IC -- VCE
­160 ­140 IB= ­1.0mA Ta=25°C ­100
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 160 VCE= ­10V
hFE -- IC
Ta=75°C
­ 30 ­10 ­3 ­1 ­ 0.3 ­ 0.1 ­ 25°C ­ 0.03 ­ 0.01 ­ 0.1 ­ 0.3 Ta=75°C
Collector current IC (mA)
­ 0.9mA ­120 ­100 ­ 80 ­ 60 ­ 0.3mA ­ 40 ­ 0.2mA ­ 20 ­ 0.1mA 0 0 ­2 ­4 ­6 ­8 ­10 ­12 ­ 0.8mA ­ 0.7mA ­ 0.6mA ­ 0.5mA ­ 0.4mA
Forward current transfer ratio hFE
25°C 120 ­ 25°C 80
25°C
40
­1
­3
­10
­ 30
­100
0 ­1
­3
­10
­ 30
­100 ­ 300 ­1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob -- VCB
6
I O -- V IN
f=1MHz IE=0 Ta=25°C
VIN -- IO
VO= ­ 5V Ta=25°C
­100 ­ 30 VO= ­ 0.2V Ta=25°C
­10000 ­3000
Collector output capacitance Cob (pF)
5
Output current IO (µA)
4
Input voltage VIN (V)
­1000 ­ 300 ­100 ­ 30 ­10 ­3
­10 ­3 ­1 ­ 0.3 ­ 0.1 ­ 0.03 ­ 0.01 ­ 0.1 ­ 0.3
3
2
1
0 ­ 0.1 ­ 0.3
­1
­3
­10
­ 30
­100
­1 ­ 0.4
­ 0.6
­ 0.8
­1.0
­1.2
­1.4
­1
­3
­10
­ 30
­100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
3