Details, datasheet, quote on part number: UNR6221UN6221
PartUNR6221UN6221
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
Description
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR6221UN6221 datasheet
  

 

Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg

Note) The Part numbers in the Parenthesis show conventional part number.
Parameter Collector cutoff current Emitter cutoff current UNR6222 UNR6223/6224

Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL fT R1 Conditions VCB = 0 VCE = 0 VEB = 0 VCE = 5mA VCC = 500 VCC = 500 VCB 200MHz R1/R2 MHz min typ max V mA Unit A

Collector to base voltage Collector to emitter voltage Forward current transfer ratio UNR6222 UNR6223/6224

Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance UNR6222 UNR6223



 

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UNR6222UN6222
UNR6223UN6223
UNR6224UN6224
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR6222 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR6222UN6222
UNR6223 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR6223UN6223
UNR6224 Silicon NPN Epitaxial Planer Transistor With Biult-in Resistor
UNR6224UN6224
UNR7231 Marking = ic ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MiniP3-F1
UNR7231UN7231
UNR8231 Marking = ;; VCEO(V) = 20 ;; IC(A) = 0.7 ;; PT(W) = 1 ;; R1(kW ) = 1 ;; R2(kW ) = 0.021 ;; Package = MT-2-A1
UNR8231AUN8231A
UNR9110 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9110JUN9110J
UNR9111 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9111JUN9111J
UNR9112 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9112JUN9112J
UNR9113 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
Same catergory

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SF161AS : 16 A, 50 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Anode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, SUPER FAST RECOVERY ; IF: 16000 mA ; RoHS Compliant: RoHS ; Package: D2PAK, PLASTIC, D2PAK-3 ; Pin Count: 2 ; Number of Diodes: 2.

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