Details, datasheet, quote on part number: UNR8231UN8231
PartUNR8231UN8231
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
Description
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR8231UN8231 datasheet
  

 

Features, Applications

High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the equipment and reduction of the number of parts. Available in a type with radial taping.

Parameter Collector to base voltage UNR8231A UNR8231 Symbol VCBO VCEO ICP IC PT* Tj Tstg

Collector to emitter voltage UNR8231A Peak collector current Collector current Total power dissipation Junction temperature Storage temperature

* Printed circuit board: Copper foil area 1cm2 or more and thickness of 1.7mm for the collector portion.

Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to base voltage UNR8231 UNR8231A

Symbol ICBO ICEO IEBO VCBO VCEO hFE* VCE(sat)* R1/R2 fT VCB = 200MHz Conditions VCB = 0 VCE = 0 VEB = 0 VCE = 5mA MHz *Pulse measurement V k min typ max 10 0.5 Unit mA V

Forward current transfer ratio Collector to emitter saturation voltage Input resistance Resistance ratio Transition frequency

Note) The Part numbers in the Parenthesis show conventional part number.
Copper foil area 1cm2 or more and thickness of 1.7mm for the collector portion.

Request for your special attention and precautions in using the technical information and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.

Please read the following notes before using the datasheets

A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.


 

Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR9110 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9110J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9110JUN9110J
UNR9111 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9111J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9111JUN9111J
UNR9112 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9112JUN9112J
UNR9113 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9113JUN9113J
UNR9114 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9114J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9114JUN9114J
UNR9115 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9115JUN9115J
UNR9116 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9116J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9116JUN9116J
 
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