Details, datasheet, quote on part number: UNR9111J
PartUNR9111J
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 6L ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = - ;; Package = SSMini3-F1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR9111J datasheet
Cross ref.Similar parts: PDTA114EM, DTA014EEBTL, UN9111J
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Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-mini type package, allowing automatic insertion through tape packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating + 125 Unit mW C

Note) The part number in the parenthesis shows conventional part number.

Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR9119J UNR9118J/911LJ/911CJ/911VJ Collector to base voltage Collector to emitter voltage Forward UNR9111J current UNR9112J/911EJ transfer UNR9113J/9114J/911AJ/ ratio UNR911NJ/911TJ UNR911VJ Collector to emitter saturation voltage High-level output voltage Low-level output voltage UNR911EJ UNR911AJ Transition frequency Input resistance fT R1 VCE(sat) VOH VOL = -10 mA, 0.3 mA VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCB = 1 mA, = 200 MHz - 0.2 VCBO VCEO hFE = -10 A, = -2 mA, = 0 VCE V 460 IEBO Conditions VCB = 0 VCE = 0 VEB = 0 Min Typ Max V mA Unit A

Parameter Resistance ratio UNR911TJ UNR911AJ/911VJ Resistance between emitter to base R2 -30% Symbol R1/R2 Conditions Min Typ k Max Unit



 

Related products with the same datasheet
UN9111J
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UN911EJ
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Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR9111JUN9111J
UNR9112 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9112J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9112JUN9112J
UNR9113 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9113J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9113JUN9113J
UNR9114 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9114J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9114JUN9114J
UNR9115 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9115JUN9115J
UNR9116 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9116J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9116JUN9116J
UNR9117 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9117J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9117JUN9117J
UNR9118 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9118J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1

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