Details, datasheet, quote on part number: UNR9115
PartUNR9115
Category
DescriptionSilicon PNP Epitaxial Planer Transistor With Biult-in Resistor
CompanyPanasonic Industrial Company/Electronic Components
 
Cross ref.Similar parts: DDTA114TE
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Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR9115J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9115JUN9115J
UNR9116 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9116J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9116JUN9116J
UNR9117 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9117J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9117JUN9117J
UNR9118 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9118J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9118JUN9118J
UNR9119 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9119J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9119JUN9119J
UNR911AJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR911D Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR911DJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR911DJUN911DJ
UNR911E Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR911EJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR911EJUN911EJ

2SA1790 : High-Frequency Amplifiers VCEO(V) = -20 ;; IC(A) = -0.03 ;; HFE(min) = 70 ;; HFE(max) = 220 ;; Package = SSMini3-G1

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MAZ40620MF : Diode - Zener - Single Discrete Semiconductor Product 3A @ 4V 6.2V 370mW Through Hole; DIODE ZENER 6.2V 370MW DO-34 Specifications: Voltage - Zener (Nom) (Vz): 6.2V ; Power - Max: 370mW ; Impedance (Max) (Zzt): 20 Ohm ; Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA ; Current - Reverse Leakage @ Vr: 3A @ 4V ; Tolerance: - ; Mounting Type: Through Hole ; Package / Case: DO-204AG, DO-34, Axial ; Packaging: Cut Ta

 
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