Details, datasheet, quote on part number: UNR9115J
PartUNR9115J
CategoryDiscrete => Transistors => Bipolar => RETs (Resistor Equipped transistors)
TitleRETs (Resistor Equipped transistors)
DescriptionMarking = 6L ;; V<SUB>CEO</SUB>(V) = -50 ;; I<SUB>C</SUB>(A) = -0.1 ;; P<SUB>T</SUB>(W) = 0.125 ;; R<SUB>1</SUB>(kW ) = 47 ;; R<SUB>2</SUB>(kW ) = - ;; Package = SSMini3-F1
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload UNR9115J datasheet
Cross ref.Similar parts: UN9115J
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Features, Applications

Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-mini type package, allowing automatic insertion through tape packing.

Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO PT Tj Tstg Rating + 125 Unit mW C

Note) The part number in the parenthesis shows conventional part number.

Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current UNR9119J UNR9118J/911LJ/911CJ/911VJ Collector to base voltage Collector to emitter voltage Forward UNR9111J current UNR9112J/911EJ transfer UNR9113J/9114J/911AJ/ ratio UNR911NJ/911TJ UNR911VJ Collector to emitter saturation voltage High-level output voltage Low-level output voltage UNR911EJ UNR911AJ Transition frequency Input resistance fT R1 VCE(sat) VOH VOL = -10 mA, 0.3 mA VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCC 1 k VCB = 1 mA, = 200 MHz - 0.2 VCBO VCEO hFE = -10 A, = -2 mA, = 0 VCE V 460 IEBO Conditions VCB = 0 VCE = 0 VEB = 0 Min Typ Max V mA Unit A

Parameter Resistance ratio UNR911TJ UNR911AJ/911VJ Resistance between emitter to base R2 -30% Symbol R1/R2 Conditions Min Typ k Max Unit



 

Related products with the same datasheet
UN9111J
UN9112J
UN9113J
UN9114J
UN9115J
UN9116J
UN9117J
UN9118J
UN9119J
UN911DJ
UN911EJ
UN911FJ
Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
UNR9115JUN9115J
UNR9116 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9116J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9116JUN9116J
UNR9117 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9117J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9117JUN9117J
UNR9118 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9118J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9118JUN9118J
UNR9119 Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR9119J Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR9119JUN9119J
UNR911AJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR911D Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR911DJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR911DJUN911DJ
UNR911E Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
UNR911EJ Marking = 6L ;; VCEO(V) = -50 ;; IC(A) = -0.1 ;; PT(W) = 0.125 ;; R1(kW ) = 47 ;; R2(kW ) = - ;; Package = SSMini3-F1
UNR911EJUN911EJ
UNR911F Silicon PNP Epitaxial Planer Transistor With Biult-in Resistor
 
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